Through Electrodes With Intermediary Layers for Semiconductor Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices with through electrodes face challenges in achieving reliable electrical connections and faster speeds, particularly in three-dimensional configurations, due to issues with electrical reliability and interface material migration.
Innovation Solution
A semiconductor device design featuring a substrate with an integrated circuit, insulation layers, and through electrodes that penetrate the substrate, where metal lines are electrically connected to the integrated circuit and through electrodes, with a capping layer and intermetal dielectric layer to prevent electrical shorts and enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If through electrodes are used to electrically connect semiconductor devices, then connection speed is improved, but electrical reliability deteriorates due to interface material migration
Solution Approach 1:
An intermediate layer is introduced between the through electrode and the metal lines to prevent direct contact and material migration. This intermediate layer acts as a barrier that maintains electrical connection while preventing harmful interactions, thus resolving the reliability issue while preserving the speed advantage of through electrodes.
Solution Approach 2:
The patent employs a sacrificial or consumable intermediate material that can be deliberately designed to prevent migration. This material may be intentionally placed to undergo controlled changes or be replaced, serving as a temporary barrier that protects the critical electrical connection interface.
2Reliability
If multiple metal lines are used to connect to through electrodes, then electrical connection is improved, but electrical shorts occur due to interface material migration between metal lines
Solution Approach 1:
An intermediate insulating layer is placed between adjacent metal lines that contact the through electrode. This intermediary prevents material migration from one metal line to another, eliminating the source of electrical shorts while maintaining the electrical connection function of multiple metal lines.
Solution Approach 2:
The patent segments the interface region between metal lines by introducing distinct insulating layers or barriers. This segmentation physically separates the metal lines at the through electrode interface, preventing continuous material migration paths and thus preventing electrical shorts.
3Ease of manufacture
If conventional solder balls are used for connection, then manufacturing is simpler, but connection speed is slower
Solution Approach 1:
The patent transitions from two-dimensional planar connections (conventional solder balls on surface) to three-dimensional vertical connections (through electrodes penetrating the substrate). This dimensional change enables faster signal transmission through the substrate while the overall manufacturing process remains compatible with existing semiconductor fabrication techniques.
Data Source
AI summary
The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact.