Through-Electrode Metal Line Lateral Offset for Parasitic Capacitance Reduction
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Solution Overview
Problem
Conventional semiconductor devices with through-electrodes face challenges in reducing parasitic capacitance and increasing integration due to vertical overlaps and keep-out zones, which affect signal transmission speed and integration density.
Innovation Solution
A semiconductor device design featuring a through-electrode with an oval-shaped top surface and strategically positioned metal pads and lines, where the metal lines do not vertically overlap the pads, and a via connects the metal pads to the through-electrode, minimizing parasitic capacitance and optimizing contact area for improved signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If metal lines are positioned above metal pads in conventional semiconductor devices, then electrical connections are established, but parasitic capacitance increases and signal transmission speed decreases
Solution Approach 1:
The patent transitions from a two-dimensional vertical stacking arrangement (metal lines directly above metal pads) to a three-dimensional configuration where metal lines are positioned laterally adjacent to metal pads. This dimensional change eliminates vertical overlap while maintaining electrical connectivity through the through-electrode structure, thereby reducing parasitic capacitance and improving signal transmission speed.
Solution Approach 2:
The patent extracts the metal lines from their conventional position directly above the metal pads and relocates them to lateral positions adjacent to the pads. This separation removes the source of parasitic capacitance (vertical overlap) while preserving the functional connection through the through-electrode, thus eliminating the harmful electromagnetic coupling between overlapping conductors.
2Productivity
If through-electrodes are used to connect semiconductor devices, then transmit speed increases compared to solder bumps, but keep-out zones and vertical overlaps reduce integration density
Solution Approach 1:
The patent utilizes three-dimensional space by positioning metal lines laterally adjacent to through-electrodes rather than vertically above them. This eliminates the need for large keep-out zones around through-electrodes, allowing closer spacing of multiple through-electrodes and increasing integration density while maintaining high transmit speed benefits.
Solution Approach 2:
The patent nests multiple metal lines and metal pads around the through-electrode in a lateral configuration, maximizing the use of available space. This nested arrangement allows multiple signal paths to be packed closely together without requiring excessive keep-out zones, thereby increasing integration density.
3Device complexity
If metal lines vertically overlap metal pads, then routing is simplified, but parasitic capacitance increases and signal quality deteriorates
Solution Approach 1:
The patent resolves the routing complexity by transitioning from vertical overlap to lateral adjacency in the third dimension. This spatial reconfiguration maintains routing simplicity while eliminating parasitic capacitance, as metal lines now run parallel to rather than perpendicular to the through-electrode axis.
Solution Approach 2:
The patent employs asymmetric positioning where metal lines are placed laterally adjacent to metal pads rather than symmetrically above them. This asymmetric arrangement breaks the vertical alignment that causes parasitic capacitance while maintaining effective electrical connection through the through-electrode structure.
Data Source
AI summary
Semiconductor devices having through-electrodes are provided. The semiconductor devices may include a substrate, a through-electrode penetrating vertically through the substrate, a circuit layer on the substrate and metal lines in the circuit layer. The metal lines may include two first metals on opposing edges of a top surface of the through-electrode and second metals above the top surface of the through-electrode. At least some of the second metals may not vertically overlap the two first metals.