Through Electrode Opening for Thermal Expansion in Semiconductor Chips
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor chip connections using wire bonding result in high power consumption, signal loss, and design limitations, while three-dimensional integrated circuit packages with through silicon via (TSV) aim to address these issues but face challenges in reliability and electrical characteristics due to thermal expansion causing substrate cracks.
Innovation Solution
A semiconductor chip design featuring a through electrode with an internal opening in the substrate, allowing thermal expansion without protruding outside, thereby minimizing substrate damage and enhancing reliability and electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a through silicon via (TSV) is used to connect semiconductor chips vertically, then the connection length is reduced and integration density is improved, but thermal expansion causes substrate cracks and reduces reliability
Solution Approach 1:
The through electrode is designed with non-uniform cross-sectional area along its length, with a larger cross-section at the ends and a reduced cross-section in the middle portion. This local variation in geometry allows the electrode to accommodate thermal expansion differently at different locations, reducing stress concentration and preventing substrate cracks while maintaining the vertical connection benefit
Solution Approach 2:
The invention changes the geometric parameters of the through electrode by introducing a reduced cross-sectional area portion in the middle. This parameter modification enables the electrode to flexibly respond to thermal expansion forces, allowing it to expand within the substrate boundaries rather than causing external damage or substrate cracking
2Reliability
If the through electrode is completely filled in the hole, then electrical connection is improved, but thermal expansion causes the electrode to protrude outside and damage the substrate
Solution Approach 1:
The through electrode features a non-uniform cross-sectional area distribution, with the middle portion having a reduced cross-section compared to the end portions. This local geometric variation allows the electrode to contain its thermal expansion within the substrate boundaries, preventing protrusion and substrate damage while maintaining adequate electrical connection through the larger end cross-sections
Solution Approach 2:
The reduced cross-sectional area in the middle portion of the through electrode acts as a pre-designed cushioning region that absorbs thermal expansion stress before it can propagate to the substrate boundaries. This beforehand cushioning structure prevents the harmful effect of electrode protrusion and substrate damage while preserving electrical connectivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves the reliability and electrical characteristics of semiconductor chips by allowing thermal expansion of the through electrode within the substrate, reducing the risk of substrate cracking and maintaining chip integrity.
Implementation Method 1
allowing thermal expansion without protruding outside, thereby minimizing substrate damage and enhancing reliability and electrical characteristics
Data Source
AI summary
Provided are a semiconductor chip and a method of manufacturing the same. The semiconductor chip includes a substrate having a first side and a second side facing each other, and a through electrode being disposed in a hole penetrating the substrate, wherein an opening surrounded by the through electrode is disposed in the hole, wherein the opening comprises a first end adjacent to the first side of the substrate and a second end adjacent to the second side of the substrate.