Through-Electrode Bonding with Resin-Covered Semiconductor Members
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Solution Overview
Problem
Existing methods for manufacturing semiconductor devices face challenges in reliably bonding through electrodes due to insufficient heat transfer and bonding pressure, particularly when terminal electrodes are present, leading to potential misalignment and cracking.
Innovation Solution
A method involving a cured resin layer covering terminal electrodes and through electrodes, allowing for uniform heat transfer and bonding pressure application, ensuring secure attachment to a support structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a collet is used to hold and heat the semiconductor die for bonding, then the bonding process can be performed, but the heat transfer to the through electrode is insufficient when terminal electrodes are present
Solution Approach 1:
A resin layer is introduced as an intermediary material between the collet and the semiconductor die. This resin layer fills the space around the terminal electrodes and through electrode, enabling the collet to contact and transfer heat to the entire upper surface of the die uniformly, including the region around the through electrode that would otherwise be inaccessible.
Solution Approach 2:
The resin layer changes the thermal and mechanical parameters of the system by providing a material with appropriate thermal conductivity and compressibility. This allows heat to be distributed more effectively and bonding pressure to be applied uniformly across the bonding interface, resolving the heat transfer insufficiency problem.
2Force
If the collet applies load only to the outer periphery to avoid terminal electrodes, then contact with terminal electrodes is avoided, but bonding pressure is insufficient
Solution Approach 1:
The resin layer serves as a mediator that transmits the compressive force from the collet uniformly to the entire upper surface of the semiconductor die, including the region around the through electrode. This eliminates the need to limit collet contact to the periphery only, enabling full-surface pressure application for reliable bonding.
Solution Approach 2:
The resin layer modifies the mechanical pressure distribution by providing a compliant medium that distributes the load uniformly. This changes the pressure parameter from concentrated peripheral contact to distributed full-surface contact, achieving sufficient bonding pressure without operational complexity.
3Reliability
If a resin layer is added to cover terminal electrodes and through electrode, then heat transfer and bonding pressure are improved, but device structure becomes more complex
Solution Approach 1:
The resin layer is applied as a segmented or localized material filling the specific regions around terminal electrodes and the through electrode. This segmentation approach adds complexity only where needed, rather than uniformly across the entire device, thereby improving bonding reliability with minimal additional structural complexity.
Solution Approach 2:
The resin layer performs multiple functions simultaneously: it provides thermal conduction for heat transfer, mechanical compliance for pressure distribution, and structural support for electrode alignment. This multi-functionality justifies the added material by delivering multiple benefits from a single component addition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures reliable bonding of through electrodes while preventing cracking and misalignment, facilitating easy handling and attachment of semiconductor members.
Implementation Method 1
heat-bonding the second end of the through electrode and the wiring electrode of the support to each other by pressing a surface of the cured resin layer of the semiconductor member while making the heating element in contact with the surface of the cured resin layer
Data Source
AI summary
A semiconductor device is disclosed. The semiconductor includes semiconductor member and a support. The semiconductor member includes a semiconductor substrate having a first surface and a second surface on an opposite side, a plurality of terminal electrodes provided on the first surface of the semiconductor substrate, a through electrode that penetrates the semiconductor substrate and has a first end protruding from the first surface and a second end protruding from the second surface, and a cured resin layer provided on the first surface so as to cover the plurality of terminal electrodes and the first end of the through electrode. The support includes at least one wiring electrode. The semiconductor member is attached to the support. The second end of the through electrode and the wiring electrode of the support are bonded to each other.