Through Electrode Formation in Semiconductor Devices
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Solution Overview
Problem
Existing semiconductor devices with wire bonding connections face limitations in size reduction due to the need for space to house bonding wires, which restricts the miniaturization of devices like camera modules and image pickup devices.
Innovation Solution
The method involves forming through electrodes in a silicon substrate by creating through holes, applying a first metal layer, and using electroplating to fill these holes with a second metal, while employing insulating films and etching processes to ensure electrical connectivity and insulation, ultimately reducing device size and production costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire bonding is used to connect electrode pads on the periphery of the silicon substrate to terminal pads on the printed-circuit board, then electrical connectivity is achieved, but the device size increases due to the space required for bonding wires
Solution Approach 1:
The patent transitions from peripheral electrode pads connected by bonding wires to through-electrodes penetrating the substrate vertically. This dimensional change from planar (2D) connection to vertical (3D) connection eliminates the need for lateral bonding wire space, reducing device footprint while maintaining electrical connectivity between the image pickup device and printed-circuit board
2Reliability
If through electrodes are formed by conventional plugging methods with electroplating and high-pressure annealing, then through electrodes are created in the silicon substrate, but the manufacturing process becomes complex and time-consuming
Solution Approach 1:
The patent extracts and eliminates the high-pressure annealing step from the conventional through-electrode formation process. By using a modified electroplating method without this complex thermal treatment step, the manufacturing process is simplified while still achieving reliable through-electrode formation in the silicon substrate
Solution Approach 2:
The patent skips the time-consuming high-pressure annealing step that is traditionally required for through-electrode formation. This allows the manufacturing process to proceed more quickly through the critical electrode formation stage, reducing overall production time and complexity
3Reliability
If through electrodes are formed by conventional plugging methods with electroplating and high-pressure annealing, then through electrodes are created in the silicon substrate, but manufacturing time and cost increase
Solution Approach 1:
The patent removes the high-pressure annealing step from the manufacturing process, which is a time-consuming operation. This extraction of the unnecessary step directly increases manufacturing speed and reduces production costs while maintaining through-electrode quality
Solution Approach 2:
The patent rushes through the electrode formation process by eliminating the annealing wait time. The modified electroplating method achieves sufficient electrode formation without the prolonged thermal treatment, thereby increasing productivity and reducing manufacturing cycle time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables cost reduction, size minimization, increased density, and enhanced manufacturing speed by simplifying the formation of through electrodes in semiconductor devices, such as CCD and CMOS devices, and module parts like camera modules, without the need for bonding wires.
Implementation Method 1
forming through electrodes by filling the through holes with a second metal by virtue of an electroplating of the second metal applied from other surface of the substrate while using the first metal layer as a power feeding layer
Data Source
AI summary
A method of manufacturing a semiconductor device having a through electrode, includes forming through holes 36 in a substrate 31, forming a first metal layer 39 from one surface side of the substrate and pasting a protection film 40 on one surface of the substrate, forming through electrodes by filling the through holes with a second metal by means of an electroplating of the second metal 42 applied from other surface of the substrate while using the first metal layer as a power feeding layer, removing the protection film 40, and removing the first metal layer 39 located in areas other than peripheral portions of the through electrodes.