Through Electrode Supporting Structure for Semiconductor Devices
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining the structural integrity and electrical connectivity of through electrodes during fabrication, leading to potential failures and reduced yields due to stress-induced defects in the insulation layer formation.
Innovation Solution
A semiconductor device design featuring a substrate with a through electrode and a supporting portion that surrounds the protruding electrode, where the supporting portion has a conical shape with a height at least half of the protruding portion's height, and an insulation layer with an obtuse folding angle to prevent defects and enhance mechanical support.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a through electrode is formed in a semiconductor chip to enable stacking and high-density integration, then the device capacity and integration density are improved, but the structural integrity and reliability of the electrode during fabrication deteriorate due to stress-induced defects
Solution Approach 1:
The through electrode is divided into multiple segments: a protruding portion extending from the first surface, a recessed portion within the substrate, and a supporting portion. This segmentation allows each part to fulfill specific functions - the protruding portion provides electrical connection, the recessed portion reduces stress concentration, and the supporting portion maintains structural integrity during fabrication processes.
Solution Approach 2:
The supporting portion is formed in advance within the substrate before the insulation layer is deposited. This preliminary structural preparation ensures that the through electrode has adequate mechanical support during subsequent fabrication steps, preventing stress-induced defects in the insulation layer and improving overall electrode reliability.
2Reliability
If the protruding portion of the through electrode is made taller to improve electrical connection, then the electrical connectivity is improved, but the mechanical stability and insulation layer formation quality deteriorate due to increased stress concentration
Solution Approach 1:
Different regions of the through electrode are given different properties: the protruding portion has sufficient height for electrical connection, while the supporting portion within the substrate provides mechanical stability. The insulation layer is selectively formed with different thicknesses - thinner near the protruding portion for electrical access and thicker near the supporting portion for stress distribution and defect prevention.
Solution Approach 2:
The supporting portion acts as an intermediary element between the protruding electrode and the substrate. It mediates the mechanical stress by distributing loads and preventing stress concentration at the electrode-substrate interface, thereby enabling high-quality insulation layer formation without compromising electrical connectivity.
3Length of moving object
If the insulation layer is made thinner to reduce device profile, then the package height is reduced, but the defect rate increases due to insufficient stress distribution capability
Solution Approach 1:
The insulation layer is designed with non-uniform thickness: it is thinner in regions where electrical connection is prioritized and thicker in regions where stress distribution is critical. The supporting portion of the electrode provides localized mechanical reinforcement that compensates for the reduced insulation layer thickness, allowing low-profile design without increasing defect rates.
Data Source
AI summary
A semiconductor device includes a substrate having a first surface and an opposite second surface. An electrode extends within the substrate towards the first surface and has a protruding portion extending from the first surface. A supporting portion extends from the first surface of the substrate to a sidewall of the protruding portion and supports the protruding portion.