Through-Electrode Structure With Tapered Holes for Insulation Reliability
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Solution Overview
Problem
Existing semiconductor devices face challenges in ensuring adequate insulation and reliability of through electrodes due to thinning of organic insulating layers, particularly in corner portions of through holes, which can lead to leakage and reduced coverage of conducting layers.
Innovation Solution
The semiconductor device incorporates a tapered surface design for through holes and recessed portions, where the organic insulating layer is thicker, reducing thinning and enhancing coverage of conducting layers, and includes a second conducting layer on the organic insulating layer to increase insulation and reliability of through electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an organic insulating layer is formed by application of a solution containing an organic insulating material, then the insulating layer can be formed to prevent leakage, but the thickness of the organic insulating layer becomes thinner in corner portions of the through hole
Solution Approach 1:
The patent introduces a recessed portion that extends in the depth dimension (Z-axis) beneath the corner portion of the through hole. This dimensional extension allows the organic insulating layer to be formed with adequate thickness in the corner region by utilizing the additional space created by the recess, thereby resolving the thickness uniformity issue while maintaining insulation reliability
Solution Approach 2:
The patent creates a localized recessed portion specifically at the corner portion of the through hole where the insulating layer thickness is insufficient. This local structural modification targets the specific problem area without affecting other regions, allowing the organic insulating layer to achieve uniform thickness distribution across the entire through hole structure
2Ease of manufacture
If the organic insulating layer thickness is reduced in corner portions, then the manufacturing process is simpler, but the coverage of conducting layers is reduced and leakage risk increases
Solution Approach 1:
By extending the insulating structure into the depth dimension through the recessed portion, the patent achieves adequate insulating layer thickness in corner portions without complicating the overall manufacturing process. The recessed portion can be formed using standard etching techniques, maintaining process simplicity while ensuring reliable leakage prevention
Solution Approach 2:
The recessed portion is formed in advance before the organic insulating layer is deposited. This preliminary structural preparation ensures that when the insulating material is applied, it naturally fills the recessed area and achieves uniform thickness, eliminating the need for complex thickness control measures during the coating process
Data Source
AI summary
A semiconductor device includes a semiconductor substrate including a first surface and a second surface and having a first through hole, a first insulating layer placed on the first surface, including a fourth surface, and having a second through hole, a second insulating layer placed on the second surface and having a first opening portion, a first conducting layer exposed from the second insulating layer by the first opening portion, an organic insulating layer placed on the fourth surface, a side surface of the second through hole, a side surface of the first through hole, a side surface of the first opening portion, and a surface of the first conducting layer, and a second conducting layer placed on a surface of the organic insulating layer and a surface of the first conducting layer, wherein the side surface of the second through hole is a first tapered surface.