Through-Electrode Layout for Lower Thermal Stress in Semiconductors
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Solution Overview
Problem
Conventional semiconductor devices with through electrodes experience significant thermal stress due to differences in thermal expansion coefficients between the semiconductor substrate and the electrodes, leading to fluctuations in semiconductor element characteristics and potential insulating film cracks or peeling.
Innovation Solution
A semiconductor device design featuring a through electrode formed along a part of the side wall and bottom portion of the through hole, with an insulating film covering the side wall, and varying electrode areas and potentials to adjust thermal stress and resistivity, while also incorporating an outer electrode and back surface wiring lines to reduce crosstalk and improve signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through electrode is formed larger than the front surface wiring line to ensure electrical connection, then electrical connectivity is improved, but thermal stress increases due to coefficient of thermal expansion differences
Solution Approach 1:
The through electrode is designed with non-uniform cross-sectional area along its length, being larger at the back surface and smaller near the front surface. This local variation in geometry allows the electrode to maintain adequate electrical connectivity while reducing the overall volume of material subject to thermal expansion, thereby decreasing thermal stress on surrounding structures.
Solution Approach 2:
The through electrode structure is segmented into different regions with varying cross-sectional areas. The upper portion has a reduced cross-section compared to the lower portion, creating distinct functional zones that balance electrical conduction requirements with thermal stress management.
2Strength
If the through electrode is formed completely filling the through hole to maximize structural support, then mechanical strength is improved, but thermal stress increases causing insulating film cracks or peeling
Solution Approach 1:
The insulating film is selectively removed from specific regions of the through hole, creating local variations in insulation coverage. This allows the electrode to be mechanically supported where needed while reducing constrained thermal expansion in other areas, preventing insulating film failure.
Solution Approach 2:
The insulating film coverage is segmented into covered and uncovered portions along the through hole. The uncovered portions allow the electrode to expand freely during thermal cycling, reducing stress on the insulating film while maintaining structural integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively reduces thermal stress, improves signal transmission performance, and enhances the integration and reliability of semiconductor elements by controlling thermal expansion and electrical properties.
Implementation Method 1
a first through hole that penetrates the semiconductor substrate from a back surface to the front surface of the semiconductor substrate, and has a side wall covered with an insulating film
Data Source
AI summary
In a semiconductor device provided with a through electrode, thermal stress is reduced. The semiconductor device includes a semiconductor substrate, a wiring layer, a first through hole, and a first inner through electrode. In the semiconductor device, the wiring layer is formed on a front surface of the semiconductor substrate. Furthermore, in the semiconductor device, the first through hole penetrates the semiconductor substrate from a back surface to the front surface of the semiconductor substrate, and has a side wall covered with an insulating film. Furthermore, in the semiconductor device, the first inner through electrode is formed along a part of the side wall of the first through hole.