Through-Hole Semiconductor Fabrication With Anodic Mask Removal
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Solution Overview
Problem
The corrosion of the etching stopper during the removal of the metal mask in semiconductor device manufacturing poses challenges, affecting the characteristics of semiconductor elements and reducing productivity, as existing methods either require controlled etching rates or separate processes for forming the etching stopper and gate electrode.
Innovation Solution
The method involves forming a semiconductor device by creating a metal mask with a seed film and plating film on the substrate, forming a through-hole, and removing the plating film using an anodic reaction in an electrolyte solution to prevent corrosion of the etching stopper, while simultaneously forming the gate electrode to enhance productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the metal mask is removed by conventional etching methods, then the through-hole can be formed, but the etching stopper gets corroded affecting semiconductor element characteristics
Solution Approach 1:
The metal mask is divided into two distinct layers: a seed film layer and a plating film layer. This segmentation allows selective removal of only the plating film through anodic dissolution, while the seed film remains to protect the etching stopper, thereby preventing corrosion during mask removal
Solution Approach 2:
The seed film acts as an intermediary protective layer between the etching stopper and the corrosive environment during mask removal. It remains attached to the etching stopper during plating film dissolution, serving as a protective barrier that prevents direct contact between the etching stopper and electrolyte solution
2Reliability
If separate processes are used for forming etching stopper and gate electrode, then each component can be optimized, but productivity decreases
Solution Approach 1:
The etching stopper and gate electrode are formed simultaneously in a single integrated process. The metal mask structure serves dual purposes: as an etching stopper during through-hole formation and as the gate electrode after plating film removal, eliminating the need for separate formation processes
Solution Approach 2:
The metal mask structure is designed to perform multiple functions: it serves as an etching stopper during the through-hole etching process, and after selective plating film removal, it becomes the functional gate electrode. This multi-functionality consolidates multiple manufacturing steps into one
3Manufacturing precision
If the etching rate is controlled to prevent stopper corrosion, then stopper integrity is maintained, but the manufacturing process becomes more complex and time-consuming
Solution Approach 1:
The patent converts the potentially harmful effect of etching into a beneficial selective dissolution process. By using anodic dissolution in electrolyte solution, the plating film is selectively removed without affecting the etching stopper, turning a corrosive process into a precise removal method
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents corrosion of the etching stopper and improves productivity by integrating the formation of the etching stopper and gate electrode, allowing for efficient through-hole formation and enabling the production of high electron mobility transistors with high breakdown voltage and high-speed operation.
Implementation Method 1
removing the plating film by an anodic reaction in an electrolyte solution
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a semiconductor layer on an upper surface of a substrate, forming an etching stopper on an upper surface of the semiconductor layer, forming a metal mask including a seed film and a plating film on a lower surface of the substrate, the metal mas having an opening inside the etching stopper in plan view, forming a through-hole in the substrate and the semiconductor layer from the lower surface of the substrate to the etching stopper through the opening, and removing the plating film by an anodic reaction in an electrolyte solution after forming the through-hole.