Through Hole Electrode Insulating Film Composite
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Solution Overview
Problem
In semiconductor devices with laminated wiring, reducing the size of electrodes while maintaining insulating performance is challenging due to layout restrictions, and thinner insulating films may compromise insulating performance.
Innovation Solution
The use of through holes in semiconductor substrates with electrodes at their center and a space around them, along with a barrier metal and insulating films like SiC, helps in reducing electrode size without degrading insulating performance by managing thermal stress and acting as an insulating layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the thickness of the insulating film is reduced to decrease electrode size, then the electrode diameter can be reduced, but the insulating performance deteriorates
Solution Approach 1:
The patent employs a composite insulating film structure consisting of a first insulating film (lower layer) and a second insulating film (upper layer) with different material compositions and dielectric constants. The first insulating film uses a material with a lower dielectric constant to reduce inter-wiring capacitance, while the second insulating film uses a material with higher insulation performance to maintain reliable electrical isolation. This composite approach allows the insulating film thickness to be reduced while preserving insulating performance.
Solution Approach 2:
The patent applies different material properties to different regions of the insulating film structure. The first insulating film is positioned where inter-wiring capacitance reduction is most beneficial, while the second insulating film is positioned where electrical insulation is critical. This local differentiation of material quality enables simultaneous optimization of both electrode size and insulating performance.
2Length of moving object
If the insulating film is made thinner to reduce electrode size, then layout restrictions are relaxed, but thermal stress management becomes difficult
Solution Approach 1:
The composite insulating film structure with multiple layers of different materials provides not only electrical insulation but also thermal stress management. The different material compositions in the first and second insulating films are selected to have compatible thermal expansion coefficients, allowing the structure to withstand thermal cycling without generating excessive stress, even when the overall film thickness is reduced.
Solution Approach 2:
The patent changes the material parameters (dielectric constant, thermal expansion coefficient, mechanical strength) of the insulating film by using different materials in different layers. This parameter differentiation allows the thin insulating film structure to simultaneously achieve reduced capacitance, maintained insulation performance, and improved thermal stress resistance.
Data Source
AI summary
The present technology relates to a semiconductor device, an imaging device, and a manufacturing apparatus, capable of providing a semiconductor substrate maintaining and improving insulating performance. A through hole that penetrates the semiconductor substrate, an electrode at the center of the through hole, and a space around the electrode are included. The through hole also penetrates an insulating film formed on the semiconductor substrate. A barrier metal is further included around the electrode. An insulating film is further included in the semiconductor substrate and the space. The semiconductor device has a multilayer structure, and the electrode connects wirings formed in different layers to each other. The present technology can be applied to, for example, an image sensor in which a logic circuit and a sensor circuit are laminated.