Through Silicon Port for MEMS Sensor Particle Protection
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Solution Overview
Problem
Conventional MEMS sensor packages, such as open cavity and molded cavity types, lack effective particle protection and are limited in size and cost due to structural constraints and complex manufacturing processes, making them unsuitable for monolithically integrated sensor-ASIC dies.
Innovation Solution
The implementation of a through silicon port (TSP) with a single hole or multiple smaller holes etched from the front and deep-etched from the backside of the semiconductor die, providing a link to the outside environment while regulating particle protection, and optionally incorporating spring structures for mechanical stress decoupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a port is formed in the cap/lid or substrate for sensor applications, then a link to the outside environment is provided, but particle protection is insufficient
Solution Approach 1:
The patent implements a through silicon port (TSP) with a specific diameter (e.g., 50-150 μm) that acts as a physical barrier to particles while allowing gas molecules to pass through. The port's dimensions are carefully controlled to provide particle filtration functionality, resolving the contradiction between environmental access and particle protection.
2Object-affected harmful factors
If additional meshes are applied on the port for particle protection, then particle protection is improved, but package cost increases
Solution Approach 1:
The patent extracts the particle protection function from separate additional meshes and integrates it directly into the semiconductor die substrate through the TSP structure. This eliminates the need for separate mesh components and their associated assembly processes, thereby reducing package cost while maintaining particle protection.
Solution Approach 2:
The patent combines multiple functions (particle protection, environmental access, and structural support) into a single integrated TSP structure formed in the semiconductor die. This merging of functions eliminates the need for separate particle protection meshes and reduces overall package complexity and cost.
3Strength
If OCP package structure is used with cap/lid and substrate, then mechanical protection is provided, but package footprint is limited due to additional space requirements
Solution Approach 1:
The patent merges the substrate and sensor die into a monolithically integrated structure where the sensor is fabricated directly in the silicon substrate. This eliminates the need for separate cap/lid assemblies and reduces the package footprint while maintaining mechanical protection through the integrated structure.
Solution Approach 2:
The patent extracts the sensor structure from a separate die and integrates it directly into the substrate, eliminating the need for additional bonding areas, wire bonds, and cap/lid assemblies. This extraction and integration significantly reduces the package footprint.
4Adaptability or versatility
If FAM process is used for MCP package type, then opening formation is achieved, but minimum port size is limited due to complex process tolerances
Solution Approach 1:
The patent uses standard semiconductor fabrication processes (photolithography, etching) that are inherently precise and well-controlled in the semiconductor industry. These self-service processes leverage existing manufacturing capabilities to achieve precise TSP dimensions without requiring additional complex tolerance control measures.
Data Source
AI summary
A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.