TSV Structure With Conductive 2D Barrier Layer for High-Frequency Loss
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In high-frequency signal transmission through TSV structures, the skin effect causes a decrease in transmission efficiency due to increased resistance as the current concentrates on the surface of the conductor, leading to deteriorated performance.
Innovation Solution
A semiconductor structure with a via filled by a conductor, where a conductive 2D material barrier layer is used to reduce resistance and enhance transmission efficiency, replacing traditional Ta or TaN barrier layers, and the 2D material's low resistivity and elastic surface properties mitigate electron scattering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a traditional conductor (such as Cu) is filled into the via for signal transmission, then the TSV structure can be formed, but the transmission efficiency decreases significantly at high frequencies due to skin effect
Solution Approach 1:
The patent changes the material parameter of the barrier layer from traditional Ta or TaN to conductive 2D materials (such as graphene, MoS2, WS2, MoSe2, WSe2, or their stacked combinations). This material substitution fundamentally alters the electrical conductivity parameter, enabling the barrier layer to actively participate in current conduction and reduce overall resistance, thereby improving transmission efficiency at high frequencies while addressing the skin effect limitation
Solution Approach 2:
The patent employs composite material structures where conductive 2D materials are combined with traditional conductors (Cu, Al, or their alloys) in a layered configuration. The conductive 2D material barrier layer works synergistically with the bulk conductor to provide both barrier functionality and enhanced conductivity, creating a composite structure that overcomes the limitations of single-material approaches at high frequencies
2Productivity
If the TSV size is reduced to improve integration density, then more devices can be integrated, but the transmission efficiency deteriorates due to increased resistance
Solution Approach 1:
By substituting the barrier layer material with conductive 2D materials, the patent changes the electrical conductivity parameter to compensate for the increased resistance that occurs when TSV dimensions are reduced. This allows smaller via sizes to maintain acceptable transmission efficiency, thereby enabling higher integration density without sacrificing performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The conductive 2D material barrier layer decreases the resistance of the TSV structure, improving high-frequency transmission efficiency and maintaining effectiveness as the TSV size shrinks, providing a higher transmission efficiency compared to conventional structures.
Implementation Method 1
as the signal frequency increases, the transmission efficiency may decrease significantly due to skin effect. When the frequency increases, the conductive area through which a current pass decreases, and the current will more concentrate on a surface of the conductor.
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure comprises a substrate, a via, a liner layer, a barrier layer, and a conductor. The via penetrates through the substrate. The liner layer is formed on a sidewall of the via. The barrier layer is formed on the liner layer. The barrier layer comprises a conductive 2D material. The conductor fills a remaining space of the via.