Through-Via Capacitor Layout for Dense 3D Package Reliability
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing integration density and improving the reliability of through-vias in 3D and 2.5D packages, particularly due to thermal stress and physical damage from through-silicon vias (TSVs).
Innovation Solution
The semiconductor device incorporates a decoupling capacitor and epitaxial patterns in the keep-out zone, connected through a middle connection layer and an interconnection layer to a through-via that penetrates the substrate, thereby reducing IR drops and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If through-silicon vias (TSVs) are used to form vertical electrical connections in 3D and 2.5D packages, then integration density is increased, but thermal stress and physical damage occur reducing reliability
Solution Approach 1:
The through-via structure is segmented into multiple parts: a first via portion through the substrate, a second via portion through the interposer, and a connection portion joining them. This segmentation allows independent optimization of each segment and reduces thermal stress by distributing it across multiple interfaces rather than a single continuous via.
Solution Approach 2:
An interposer is introduced as an intermediary component between the substrate and the semiconductor chip. The interposer contains via structures that mediate the electrical and thermal connections, reducing the stress on the substrate and improving overall reliability of the vertical interconnect system.
2Productivity
If TSVs penetrate the substrate to form vertical electrical connections, then integration technique is improved, but physical damage occurs reducing reliability
Solution Approach 1:
The connection portion of the via structure is designed with enhanced mechanical properties to cushion and absorb physical stress before it reaches the substrate. This pre-cushioning approach protects the substrate from damage during the bonding process and under subsequent thermal-mechanical loading.
Solution Approach 2:
The via structure employs composite material construction with different sections having different properties - the connection portion uses materials optimized for mechanical strength and stress distribution, while the via portions use materials optimized for electrical conductivity and thermal management.
3Reliability
If via structures are added to the device, then vertical electrical connection is achieved, but device complexity increases
Solution Approach 1:
The via formation process is merged with existing fabrication steps. The first via portion is formed using the same substrate processing steps as the semiconductor device itself, and the second via portion is formed during interposer fabrication, eliminating the need for separate via formation processes and reducing overall complexity.
Solution Approach 2:
The via structure serves multiple functions simultaneously: electrical connection, thermal management, and mechanical stress distribution. This multi-functionality reduces the need for additional separate components and simplifies the overall device architecture despite the enhanced capabilities.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate including a connection region, a pair of epitaxial patterns provided at the semiconductor substrate, a capacitor disposed between the pair of epitaxial patterns, a middle connection layer on the capacitor, an interconnection layer on the middle connection layer, and a through-via provided under the interconnection layer and penetrating the connection region of the semiconductor substrate. The capacitor includes an upper portion of the semiconductor substrate between the pair of epitaxial patterns, a metal electrode on the upper portion of the semiconductor substrate, and a dielectric pattern disposed between the upper portion of the semiconductor substrate and the metal electrode. The through-via is connected to the capacitor through the interconnection layer and the middle connection layer.