Through-Semiconductor Via Structure With Local Dopant Reduction
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Solution Overview
Problem
New packaging technologies for semiconductor dies face manufacturing challenges in achieving higher density and functionality while maintaining protection and heat dissipation, particularly in 3D and 2.5D packaging structures.
Innovation Solution
The formation of modified portions in the semiconductor body with reduced dopant concentration surrounding through semiconductor vias, combined with advanced interconnection structures and bonding methods, enhances heat dissipation and reduces capacitance, improving the reliability and performance of semiconductor device structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If through semiconductor vias are formed in densely packed 3D and 2.5D packaging structures, then interconnection density and functionality are improved, but manufacturing precision and reliability deteriorate due to challenges in forming modified portions with reduced dopant concentration
Solution Approach 1:
The semiconductor body is divided into distinct regions: a first region with initial dopant concentration and a second region (modified portion) with reduced dopant concentration surrounding the through semiconductor via. This segmentation allows different dopant concentrations in different locations to achieve both high interconnection density and reliable via formation.
Solution Approach 2:
The dopant concentration is made non-uniform by creating a modified portion with reduced dopant concentration specifically around the through semiconductor via location. This local modification enables precise control of via formation characteristics at the via site while maintaining the original dopant concentration in other regions of the semiconductor body.
2Adaptability or versatility
If through semiconductor vias are formed in 3D and 2.5D packaging structures, then device functionality is improved, but heat dissipation capability deteriorates due to increased capacitance
Solution Approach 1:
A modified portion with reduced dopant concentration is created locally around the through semiconductor via. This local modification reduces capacitance specifically at the via region, improving heat dissipation and signal integrity without affecting the functionality of other device regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the operation speed and heat dissipation of semiconductor devices by reducing capacitance and enhancing the reliability and performance of 3D and 2.5D packaging structures, addressing manufacturing challenges and increasing efficiency.
Implementation Method 1
the modified portions may help to reduce the capacitance near the through semiconductor vias
Implementation Method 2
improves the operation speed and heat dissipation of semiconductor devices
Data Source
AI summary
A semiconductor device structure and a formation method are provided. The method includes forming an opening in a semiconductor body, and the semiconductor body is p-type doped. The method also includes introducing n-type dopants into the semiconductor body to form a modified portion near the opening, and the modified portion is p-type doped. The method further includes forming a dielectric layer along the sidewalls and the bottom of the opening. In addition, the method includes forming a conductive structure over the dielectric layer to fill the opening.