Through Via Doping Structure for Leakage Current Reduction
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Solution Overview
Problem
Semiconductor devices with through via structures face challenges in reducing contamination and leakage current between contact and wiring structures, affecting reliability and yield.
Innovation Solution
A semiconductor device design incorporating a through via structure with a doping element in specific regions to prevent diffusion of metal materials and enhance insulation, including a via insulating layer and inter-metal insulating layers to reduce leakage current and contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through via structure is formed to connect stacked semiconductor chips, then electrical connection between chips is improved, but contamination and leakage current between contact and wiring structures increase
Solution Approach 1:
The patent applies local quality by creating a doping structure with different regions: a first region with a first doping element (e.g., boron) and a second region with a second doping element (e.g., phosphorus). This localized doping approach modifies electrical properties specifically at the through via interface to reduce leakage current and prevent contamination, without affecting the overall through via connection function.
Solution Approach 2:
The patent introduces a doping structure as an intermediary element between the contact structure and wiring structure. This doping structure acts as a mediator that prevents direct interaction between metal materials, thereby reducing contamination and leakage current while maintaining electrical connectivity through the via structure.
2Reliability
If insulating layers are added to reduce leakage current, then insulation performance is improved, but device complexity increases
Solution Approach 1:
The patent merges the insulating function with the doping structure by integrating the doping regions directly into the via structure. Instead of adding separate insulating layers, the doping elements create electric field barriers that provide insulation, thereby reducing leakage current without increasing structural complexity.
Solution Approach 2:
The patent changes the electrical parameters of the via structure by introducing doping elements with specific concentrations and distributions. This modifies the electrical field distribution and resistance characteristics, providing insulation and leakage current reduction through parameter modification rather than structural addition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces leakage current and contamination, improving the reliability and yield of semiconductor devices by preventing metal diffusion and enhancing insulation between contact and wiring structures.
Implementation Method 1
the second region may further include a first doping element than the first region
Implementation Method 2
a via insulating layer disposed on side surfaces of the through via structure, and a contact structure which extends through the front insulating layer
Data Source
AI summary
Semiconductor devices including a through via structure and methods of forming the same are provided. The semiconductor devices may include a semiconductor substrate including a first surface and a second surface opposite the first surface, a front insulating layer on the first surface of the semiconductor substrate, a back insulating layer on the second surface of the semiconductor substrate, a through via structure extending through the back insulating layer, the semiconductor substrate, and the front insulating layer, a via insulating layer on a side surface of the through via structure, and a contact structure extending through the front insulating layer. The through via structure may include a first region and a second region disposed on the first region. The second region may include a first doping element, and the first region may be substantially free of the first doping element.