Through-Via Insulating Structure for High-Voltage Isolation
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Solution Overview
Problem
As semiconductor devices, such as MOSFETs, are scaled down, parasitic capacitance among gate stacks becomes a challenge due to reduced spacing, affecting device performance, and high voltages can lead to dielectric breakdown and metal diffusion issues.
Innovation Solution
The semiconductor device design includes multiple isolation structures, doped regions, and a through-silicon via structure with insulating features that maintain a consistent voltage potential, reducing electric fields and preventing dielectric breakdown, while also preventing metal diffusion from the via to the device area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the spacing between gate stacks is reduced to scale down the semiconductor device, then the device size is reduced, but parasitic capacitance among gate stacks increases
Solution Approach 1:
The device structure is segmented into distinct regions separated by isolation structures. The gate stacks are divided into first gate stacks and second gate stacks with different doping configurations, creating electrical separation that reduces parasitic capacitance while maintaining compact overall device size.
Solution Approach 2:
The isolation structure is doped to establish a common voltage potential between the first gate stacks and second gate stacks. This equipotential doping reduces voltage differences between adjacent gate stacks, thereby minimizing parasitic capacitance effects while allowing reduced spacing between gate stacks.
2Power
If high voltage is applied to the semiconductor device, then the device can handle higher power, but dielectric breakdown occurs
Solution Approach 1:
The isolation structure is pre-doped with specific doping concentrations before final device operation. This preliminary doping action creates a robust electrical barrier that prevents dielectric breakdown under high voltage conditions, allowing the device to handle higher power while maintaining reliability.
Solution Approach 2:
The isolation structure acts as an intermediary element between the first gate stacks and second gate stacks. It mediates the electrical interaction by providing a doped region that controls voltage distribution, preventing direct high-stress contact between opposing gate stacks and thus avoiding dielectric breakdown.
3Quantity of substance
If the spacing between gate stacks is reduced, then device density increases, but metal diffusion from via to device area occurs
Solution Approach 1:
The isolation structure implements local quality control by applying specific doping concentrations in the peripheral area surrounding the via. This localized doping creates a diffusion barrier precisely where metal diffusion is a concern, allowing reduced spacing and higher device density while preventing metal contamination in the device area.
Solution Approach 2:
The isolation structure converts the potentially harmful effect of high doping concentrations into a beneficial diffusion barrier. By deliberately introducing heavy doping in the isolation region, the patent transforms what would be a harmful high-field region into a protective barrier that prevents metal diffusion while enabling closer spacing between gate stacks.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively mitigates parasitic capacitance and dielectric breakdown, enabling high-voltage applications while preventing metal diffusion, thereby enhancing device performance and reliability.
Implementation Method 1
maintain a consistent voltage potential, reducing electric fields
Implementation Method 2
mitigates parasitic capacitance and dielectric breakdown
Implementation Method 3
preventing metal diffusion from the via to the device area
Data Source
AI summary
The present disclosure provides a semiconductor device. The semiconductor device includes: a substrate having a device area and a peripheral area surrounding the device area; a via, disposed at the peripheral area and extending at least partially through the substrate; an insulating structure, disposed at the peripheral area, extending at least partially through the substrate and surrounding the via; and a doped region, disposed at the peripheral area, over or in the substrate and adjacent to the via.