Through Via Insulation for Semiconductor Package Shorting
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Solution Overview
Problem
Current semiconductor technologies face challenges in creating low-cost, reliable, compact, and efficient multi-chip stack packages that integrate multiple semiconductor devices within a single package, particularly in achieving optimal connectivity and preventing substrate shorting while maintaining device characteristics.
Innovation Solution
The semiconductor device incorporates a through via with a via hole insulating layer and conductive connector, along with a redistribution trench and layer, where the insulation layer pattern exposes a region of the conductive connector, ensuring electrical connection and protecting the substrate from shorting, and the redistribution layer is formed using a damascene process to planarize the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through via with conductive connector is formed to extend through the substrate, then electrical connectivity is improved, but substrate shorting risk increases
Solution Approach 1:
The through via is segmented into multiple functional layers: via hole insulating layer, barrier layer, and conductive connector layer. This segmentation allows each layer to perform its specific function - the insulating layer prevents substrate shorting while the conductive connector provides electrical connectivity, resolving the contradiction between connectivity and shorting prevention.
Solution Approach 2:
The via hole insulating layer acts as an intermediary between the substrate and the conductive connector. It provides electrical isolation to prevent substrate shorting while allowing the conductive connector to establish reliable electrical connections, thus mediating between the conflicting requirements of connectivity and shorting prevention.
2Area of stationary object
If multiple semiconductor devices are integrated in a single package body, then space efficiency is improved, but device complexity increases
Solution Approach 1:
The patent transitions from two-dimensional planar integration to three-dimensional vertical stacking. Multiple semiconductor devices are stacked vertically within the package body, connected through via holes that extend through the substrate. This dimensional change allows high-density integration while managing complexity through standardized vertical interconnection structures.
Solution Approach 2:
The through via structure serves multiple functions simultaneously: it provides electrical connectivity between stacked devices, acts as a mechanical support structure, and enables thermal management pathways. This multi-functionality reduces overall system complexity by consolidating multiple requirements into a single integrated solution.
3Adaptability or versatility
If the thickness of the package is increased to accommodate multiple chips, then integration capability is improved, but two-dimensional area increases
Solution Approach 1:
The patent exploits the third dimension (vertical thickness) for multi-chip integration while maintaining a compact two-dimensional footprint. By stacking devices vertically and using through-via interconnections, the design achieves high integration capability without proportionally increasing the package's planar area, thus resolving the contradiction between integration capability and area consumption.
Data Source
AI summary
In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via hole. The through via may include a via hole insulating layer, a barrier layer, sequentially formed on an inner wall of the via hole. The through via may further include a conductive connector adjacent the barrier layer. The semiconductor device additionally includes an insulation layer pattern formed on the second surface of the substrate. The insulation layer pattern defines an opening that exposes a region of a top surface of the through via. The semiconductor devices includes a redistribution layer disposed in the trench and electrically connected to the through via. The insulation layer pattern overlaps a region of the conductive connector.