Through-Via Isolation Structure for Low-Stress Semiconductor Integration
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high integration density and reliability due to stress applied to the substrate during the formation of through isolation films, leading to lattice dislocation and reduced device performance.
Innovation Solution
The introduction of a device isolation structure around the through isolation film, which includes a first device isolation structure with sequentially stacked liner and filling films, reduces stress on the substrate and improves integration density by spacing transistors, thereby enhancing the reliability of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If through isolation films are formed in the substrate to achieve high integration density, then the integration density is improved, but stress is applied to the substrate causing lattice dislocation and reduced reliability
Solution Approach 1:
A device isolation structure comprising a liner film and a filling film is introduced as an intermediary between the through isolation film and the substrate. The liner film is formed on the sidewall and bottom surface of the through isolation film, and the filling film is formed on the liner film to fill the device isolation trench. This multi-layer isolation structure acts as a mediator that reduces stress concentration on the substrate while maintaining the through isolation film's ability to achieve high integration density.
Solution Approach 2:
The device isolation structure uses composite materials with different properties: the liner film (first material) provides stress management and adhesion, while the filling film (second material) provides mechanical support and stress distribution. This composite structure effectively manages the stress induced by through isolation films, preventing lattice dislocation and maintaining substrate reliability while enabling high integration density.
2Reliability
If transistors are spaced apart to reduce stress on the substrate, then the reliability is improved, but the integration density decreases
Solution Approach 1:
The device isolation structure with liner film and filling film serves as an intermediary that allows transistors to be placed closer together without directly transmitting stress to the substrate. The liner film adheres to the through isolation film and distributes stress, while the filling film provides additional mechanical support, enabling higher transistor density while maintaining reliability.
3Ease of manufacture
If a simple through isolation film structure is used, then the manufacturing process is simplified, but stress concentration occurs on the substrate
Solution Approach 1:
The device isolation structure is segmented into multiple functional layers: the liner film (first material) formed on the through isolation film to provide stress management and adhesion, and the filling film (second material) formed on the liner film to fill the device isolation trench and provide mechanical support. This segmentation allows each layer to address specific stress management requirements while maintaining manufacturability through sequential formation processes.
Data Source
AI summary
A semiconductor device may include a first substrate, a circuit device on the first substrate, an interlayer insulating film on the circuit device, a second substrate on the interlayer insulating film, the second substrate including a first surface adjacent to the interlayer insulating film and a second surface opposite to the first surface, a device isolation trench in the second substrate and adjacent to the second surface, a device isolation structure in the device isolation trench, a through isolation film extending in the second substrate and the device isolation structure, and a through via extending into the through isolation film and electrically connected to the circuit device.