Through-Via Landing Pad Doping for Low-Resistance Semiconductor Contacts
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Solution Overview
Problem
There is a need for semiconductor devices with improved reliability, high speed, and multifunctionality, as existing structures are becoming increasingly complex and integrated.
Innovation Solution
The semiconductor device incorporates a substrate with a channel pattern, source/drain patterns, a lower wire structure body, and a through via connected by a landing pad, where the concentration of a first element in the landing pad is equal to or greater than in the source/drain pattern, and the landing pad's width is smaller than the source/drain pattern, enhancing electrical connectivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the landing pad width is reduced to increase contact area with through via, then electrical connectivity improves, but the contact area with source/drain pattern decreases
Solution Approach 1:
The landing pad employs non-uniform doping concentration with higher concentration at the through via interface and lower concentration at the source/drain pattern interface. This local variation in electrical properties optimizes contact resistance at each interface independently, allowing the pad to maintain high electrical connectivity with the through via while preserving adequate contact area with the source/drain pattern.
Solution Approach 2:
The patent changes the doping concentration parameter of the landing pad, making it higher than that of the source/drain pattern. This parameter change increases the electrical conductivity of the landing pad, thereby improving electrical connectivity with the through via while the physical dimensions are optimized to maintain sufficient contact area with the source/drain pattern.
2Reliability
If doping concentration in landing pad is increased to reduce contact resistance, then electrical connectivity improves, but device complexity increases
Solution Approach 1:
The landing pad is doped with a first element at a concentration higher than in the source/drain pattern, creating a localized region of enhanced conductivity. This targeted doping approach reduces contact resistance at the through via interface without requiring complex multi-zone doping structures, thereby improving electrical connectivity while controlling device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves the reliability of the semiconductor device by reducing contact resistance and increasing the contact area between the through via and the source/drain patterns, thereby enhancing overall device performance.
Implementation Method 1
reducing contact resistance and increasing the contact area between the through via and the source/drain patterns
Implementation Method 2
A first element is doped to the source/drain pattern and the landing pad, such that concentration of the first element in the landing pad is equal to or greater than concentration of the first element in the source/drain pattern
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes: a substrate; a channel pattern; a source/drain pattern on the substrate; a lower wire structure body on a bottom side of the substrate; a through via penetrating the substrate and connected between the source/drain pattern and the lower wire structure body; and a landing pad between the through via and the source/drain pattern. A first element is doped to the source/drain pattern and the landing pad, such that concentration of the first element in the landing pad is equal to or greater than concentration of the first element in the source/drain pattern.