Through-Substrate Via Layout With Offset Front-Side Contact

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Solution Overview

Problem

Existing semiconductor device manufacturing processes face challenges in aligning conductive vias with front-side components, leading to increased manufacturing complexity and decreased production yield due to misalignment, which affects the reliable connection of backside routing structures to front-side components.

Innovation Solution

The implementation of a routing strategy where the conductive via extending through the substrate is intentionally offset from front-side components, with an extended contact structure on the front side providing electrical connection to the via, allowing for higher deviation tolerance and simplified manufacturing processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conductive via is aligned with front-side component, then electrical connection is established, but manufacturing precision is compromised due to misalignment

Engineering Contradiction:

Improveelectrical connectionVSAvoidvia alignment

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

Instead of aligning the conductive via with the front-side component (traditional approach), the patent inverts the approach by intentionally offsetting the via from the component. The via is positioned away from the active device, and electrical connection is achieved through an extended contact structure that reaches from the component to the via, thereby eliminating alignment issues while maintaining reliable electrical connection.

Inventive Principle:

Principle #13The other way round (Inversion)

2Reliability

If conductive via is aligned with front-side component, then electrical connection is established, but device complexity increases

Engineering Contradiction:

Improveelectrical connectionVSAvoidmanufacturing process

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent simplifies the manufacturing process by inverting the traditional alignment approach. Instead of requiring precise alignment between via and component, the via is intentionally offset and connected through an extended contact structure. This inversion reduces manufacturing complexity and improves ease of manufacture while maintaining reliable electrical connection.

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The extended contact structure is formed in advance during the manufacturing process, extending from the front-side component toward the backside before the via is fully formed. This preliminary action ensures that when the via is completed, the contact structure is already in position to establish electrical connection, simplifying the overall manufacturing process.

Inventive Principle:

Principle #10Preliminary action

3Manufacturing precision

If conductive via is offset from front-side component, then manufacturing precision is improved, but electrical connection must be extended

Engineering Contradiction:

Improvevia alignmentVSAvoidcontact structure

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extends the contact structure from the front-side component toward the backside to reach the offset conductive via. This extended contact structure compensates for the intentional offset of the via, allowing manufacturing precision to be improved while maintaining electrical connection through the extended path.

Inventive Principle:

Principle #13The other way round (Inversion)

Data Source

PatentUS20230343703A1Semiconductor device including through via and method of making

Publication Date: 2023.10.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor device includes a substrate. The semiconductor device further includes a conductive mesh on a first side of the substrate. The semiconductor device further includes an active region on a second side of the substrate, wherein the first side of the substrate is opposite to the second side of the substrate. The semiconductor device further includes a through via electrically connected to the conductive mesh, wherein the through via extends through the substrate. The semiconductor device further includes a contact structure on the second side of the substrate, wherein the contact structure is electrically connected to the active region, the contact structure is in direct contact with the through via, and the contact structure overlaps a top surface of the through via in a top view.