Through-Via Package Structure for 3D Interconnect Yield

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The semiconductor industry faces challenges in efficiently forming package structures for 3D integrated circuits and wafer-level packages, particularly in achieving reliable electrical connections and minimizing packaging defects, which affects integration density and yield.

Innovation Solution

A method involving the formation of a dielectric layer with redistribution lines, semiconductor devices, molding compound, and through-via interconnects, where conductors are formed using metal-paste printing and laser drilling to create tapered openings and connections, allowing for electrical connectivity and improved topography control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional packaging methods are used for 3D integrated circuits, then manufacturing simplicity is maintained, but integration density and yield are reduced

Engineering Contradiction:

Improveintegration densityVSAvoidpackage structure complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The patent transitions from conventional 2D packaging to 3D packaging by forming vertical through-vias that penetrate through the molding compound and dielectric layers, enabling electrical connections in the third dimension. This allows multiple semiconductor devices to be stacked and interconnected vertically, significantly increasing integration density while managing the complexity through systematic via formation processes

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements nested structures where through-vias are formed within the molding compound and dielectric layers, creating concentric layers of interconnect structures. The through-vias are nested within the package structure, with conductive material filled inside the via openings, forming a nested configuration that enables complex 3D interconnections while maintaining manufacturing feasibility

Inventive Principle:

Principle #7Nested doll (Nesting)

2Reliability

If through-via interconnects are formed in molding compound and dielectric layers, then electrical connectivity is improved, but manufacturing complexity increases

Engineering Contradiction:

Improveelectrical connection reliabilityVSAvoidthrough-via formation difficulty

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent performs preliminary actions by forming openings in the dielectric layer and molding compound before filling them with conductive material. The openings are pre-formed with appropriate dimensions and positions, and the conductive material is subsequently filled into these pre-prepared openings, ensuring reliable electrical connections while simplifying the overall manufacturing process through staged fabrication

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent replaces conventional mechanical drilling or punching methods with laser drilling to form openings in the molding compound and dielectric layers. This substitution enables precise control of via dimensions, cleaner opening formation, and better integration with subsequent filling processes, improving both electrical connection reliability and manufacturing ease

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If laser drilling is used to form tapered openings, then manufacturing precision is improved, but energy consumption increases

Engineering Contradiction:

Improveopening dimension controlVSAvoidlaser energy consumption

Core Design Contradiction:

Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The patent utilizes laser drilling with controlled parameters to form tapered openings in the dielectric layer and molding compound. By adjusting laser power, pulse duration, and scanning speed, the process achieves precise control over opening dimensions and taper angles, ensuring high manufacturing precision while optimizing energy consumption through parameter optimization rather than excessive energy input

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the integration density and yield of semiconductor packages by ensuring reliable electrical connections and minimizing defects, facilitating the formation of complex 3D structures with improved topography control.

Implementation Method 1

conformal coatings are deposited over the semiconductor devices and the molding compound. Tapered openings are drilled through the dielectric layer and the molding compound using a laser.

Methodology Applied

Scientific EffectLaser ablation: Laser Ablation

Data Source

PatentUS12009322B2Package structure with through-via in molding compound and dielectric layer

Publication Date: 2024.06.11 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A package structure includes a semiconductor device, a molding compound, a first dielectric layer, and a through-via. The molding compound is in contact with a sidewall of the semiconductor device. The first dielectric layer is over the molding compound and the semiconductor device. The through-via is in the molding compound and the first dielectric layer. The through-via is a continuous element and in contact with the first dielectric layer.