Through-Via Scallop Profiling for Conductivity and Shielding
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Solution Overview
Problem
As semiconductor devices continue to integrate more components into smaller areas, the reduction in minimum feature sizes leads to challenges in controlling conductivity and requiring additional deposition and etching steps, which increases complexity and cost.
Innovation Solution
The use of a two-stage patterning process to create through vias with different scallop depths in the sidewalls, allowing for controlled conductivity without additional steps by depositing a metal layer that is continuous in one region and discontinuous in another, providing shielding and electrostatic discharge protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If additional deposition and etching steps are used to control conductivity, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by creating different scallop depths at different locations within the same through via. The sidewalls have varying scallop depths (first scallops with first depth, second scallops with second depth greater than first depth) to achieve different conductivity characteristics in different regions. This allows conductivity control without additional deposition steps, as the metal layer naturally forms different conductivity regions based on the scallop depth variations.
2Reliability
If additional deposition and etching steps are used to create shielding, then shielding effectiveness is improved, but manufacturing cost increases
Solution Approach 1:
The patent merges the shielding function with the existing through via structure by creating discontinuous metal layers in specific regions. The metal layer is made discontinuous in regions where shielding is needed, while remaining continuous in regions requiring conductivity. This integration of shielding functionality into the via structure eliminates the need for separate shielding deposition steps, reducing manufacturing cost while maintaining shielding effectiveness.
3Productivity
If minimum feature sizes are reduced to increase integration density, then productivity is improved, but manufacturing precision deteriorates
Solution Approach 1:
The patent employs periodic action through iterative etching processes that create scallops on the sidewalls of through vias. Multiple etching iterations form a series of scallop features with controlled depths, allowing precise control of the via geometry even at reduced feature sizes. This periodic etching approach enables accurate feature size control while maintaining high integration density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process by controlling conductivity and shielding without additional deposition and etching steps, reducing costs and improving integration density in semiconductor devices.
Implementation Method 1
etching a substrate with a first patterning process to form an opening in the substrate... etching the substrate with a second patterning process to extend the opening
Implementation Method 2
depositing a metal layer in the through vias... a metal layer is then deposited in the through vias
Data Source
AI summary
A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.