Through-Via Semiconductor Layout for Heat Dissipation and Temperature Sensing

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Solution Overview

Problem

Conventional semiconductor devices face challenges in simultaneously performing heat dissipation and temperature measurement functions, leading to increased manufacturing costs, inaccurate temperature measurement, and exposure to external air temperatures, which affect the accuracy of temperature sensing near the main heating source.

Innovation Solution

A semiconductor device design that integrates a heat dissipation and temperature measurement function into a single component, using through-vias filled with conductive material to transfer heat and a temperature sensor placed within the active layer close to the channel region, isolated from external air, allowing precise temperature measurement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If heat dissipation function and temperature measurement function are performed by different components, then manufacturing reliability is improved, but device volume increases and manufacturing cost increases

Engineering Contradiction:
Improvemanufacturing reliabilityVSAvoiddevice volume
Core Design Contradiction:
ReliabilityVSVolume of moving object

Solution Approach 1:

The patent combines the heat dissipation function and temperature measurement function into a single integrated component. The through-via structure serves dual purposes: it acts as a heat dissipation pathway while simultaneously housing the temperature sensor. This merging eliminates the need for separate heat sink and temperature measurement components, thereby reducing device volume while maintaining manufacturing reliability through a unified structure.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The through-via component is designed to perform multiple functions simultaneously. It provides thermal conduction for heat dissipation from the transistor to the heat sink, while also serving as a mounting structure for the temperature sensor and providing an electrical connection path. This multi-functionality reduces the total component count and device volume without compromising manufacturing reliability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If heat dissipation function and temperature measurement function are performed by different components, then manufacturing reliability is improved, but manufacturing cost increases

Engineering Contradiction:
Improvemanufacturing reliabilityVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

By merging the heat dissipation and temperature measurement functions into a single through-via component, the patent reduces the total number of components that need to be manufactured and assembled. This integration simplifies the manufacturing process, reduces assembly steps, and lowers manufacturing costs while maintaining the reliability benefits of having both functions in a unified structure.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The multi-functional through-via component reduces manufacturing cost by eliminating the need to manufacture and assemble separate heat sink and temperature sensor components. The single component approach reduces material costs, manufacturing process costs, and assembly costs, while the integrated design maintains manufacturing reliability through a streamlined production process.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of manufacture

If temperature sensor is disposed far from channel region, then ease of manufacture is improved, but measurement precision deteriorates

Engineering Contradiction:
Improveease of manufactureVSAvoidtemperature measurement precision
Core Design Contradiction:
Ease of manufactureVSMeasurement precision

Solution Approach 1:

The patent positions the temperature sensor in the vertical dimension within the through-via structure, placing it in close proximity to the channel region horizontally while maintaining ease of manufacture through vertical integration. This dimensional arrangement allows the sensor to be located near the heat source (channel region) for accurate measurement without complicating the manufacturing process, as the through-via provides a natural vertical pathway for sensor placement.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Ease of operation

If temperature sensor is exposed to air, then ease of operation is improved, but measurement precision deteriorates due to air temperature interference

Engineering Contradiction:
Improveease of operationVSAvoidtemperature measurement precision
Core Design Contradiction:
Ease of operationVSMeasurement precision

Solution Approach 1:

The temperature sensor is nested within the through-via structure, which is embedded in the semiconductor device. This nesting protects the sensor from direct exposure to external air while keeping it thermally coupled to the transistor channel region. The through-via acts as a protective enclosure that isolates the sensor from environmental interference while maintaining its measurement function, thereby improving measurement precision without significantly impacting ease of operation.

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design reduces manufacturing costs, increases space efficiency, and provides accurate temperature measurement of the main heat source within the semiconductor device without external air interference.

Implementation Method 1

the at least one first through-via transfers heat generated in the transistor downward from the semiconductor substrate

Methodology Applied
Scientific EffectHeat transfer: Conduction (thermal)

Data Source

PatentUS20230369159A1Semiconductor device
Publication Date: 2023.11.16 WAVEPIA CO LTD
  • US20230369159A1 patent drawing
  • US20230369159A1 patent drawing
  • US20230369159A1 patent drawing

AI summary

The present invention relates to a semiconductor device. The semiconductor device according to an embodiment of the present invention includes a semiconductor substrate, a lower metal layer disposed under the semiconductor substrate and grounded, at least one transistor disposed on an upper portion of the semiconductor substrate, and at least one first through-via configured to pass through the semiconductor substrate and connected to the lower metal layer, wherein the transistor includes a gate electrode, a source electrode, and a drain electrode that are disposed on the semiconductor substrate, an inside of the at least one first through-via is filled with a conductive material, and the conductive material is electrically connected to the lower metal layer, and the at least one first through-via transfers heat generated in the transistor downward from the semiconductor substrate.