Through Wire Interconnects for High-Density 3D Semiconductor Stacking
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Solution Overview
Problem
In semiconductor manufacturing, existing packaging methods face challenges in achieving high-density signal transmission with minimal signal path lengths and cross-talk, while accommodating thermal mechanical stresses and power distribution across a wide frequency range, using readily available semiconductor assembly equipment.
Innovation Solution
The development of through wire interconnects (TWI) with polymer encapsulation, which include vias through substrate contacts, wires bonded to these contacts, and polymer layers to secure and insulate the interconnects, enabling 3D integration and stacking of semiconductor components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional packaging methods are used, then manufacturing simplicity is maintained, but signal transmission density and performance are insufficient
Solution Approach 1:
The patent transitions from planar 2D packaging to three-dimensional 3D packaging, enabling vertical stacking of semiconductor dice. Through-wire interconnects extend vertically through the stack, allowing signals to traverse multiple layers in the Z-dimension. This dimensional change achieves high-density signal transmission with minimal path lengths while maintaining manufacturing feasibility through adapted wire bonding processes.
Solution Approach 2:
The patent implements nested interconnect structures where through-wires are embedded within the semiconductor substrate stack. Multiple interconnect levels are nested vertically, with each layer containing conductive paths that pass through or between dice. This nesting enables complex signal routing within a compact volume, achieving high transmission density without proportionally increasing overall device footprint.
2Reliability
If signal path length is reduced for high-frequency performance, then electrical performance improves, but thermal management becomes more challenging
Solution Approach 1:
The patent applies local quality differentiation by providing thermal vias and heat dissipation structures at specific locations where heat generation is highest, rather than uniform thermal management throughout the device. Thermal pathways are concentrated near power-consuming elements, with localized thermal coupling to heat sinks or cooling structures positioned to address hot spots generated by the high-density interconnect architecture.
3Productivity
If 3D stacking is implemented for higher integration, then component density increases, but manufacturing complexity increases
Solution Approach 1:
The patent employs preliminary alignment and bonding of semiconductor dice in vertical stacks before final packaging. Through-wire interconnect structures are pre-formed and positioned on each die, with alignment features and bonding pads prepared in advance. This preliminary preparation enables automated stacking processes, reducing the complexity of assembling multi-layer 3D packages while achieving high integration density through systematic pre-configuration of interconnect pathways.
Data Source
AI summary
A semiconductor module system includes a module substrate and a semiconductor substrate having a through wire interconnect bonded to an electrode on the module substrate. The through wire interconnect includes a via, a wire in the via having a first end bonded to a substrate contact on the semiconductor substrate and a polymer layer at least partially encapsulating the wire. The semiconductor module system can also include a second substrate stacked on the semiconductor substrate having a second through wire interconnect in electrical contact with the through wire interconnect.