Thyristor Detector Array for Laser Warning Receivers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current Laser Warning Receivers (LWRs) for detecting the angle-of-arrival of incident laser beams are costly due to the use of multiple radiation detector arrays and complex signal processing circuitry, which increases the device's spectral sensitivity but also its price.
Innovation Solution
An array of thyristor detector devices with complementary modulation doped quantum well interfaces, integrated into a monolithic circuit with HFET transistors, that can absorb electromagnetic radiation across a broad spectral range (500 nm to 1650 nm), generating digital electrical signals and operating in a setup and signal acquisition mode to detect laser irradiation with high angular resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If two separate arrays of radiation detectors (silicon photodiodes and GaAs photodiodes) are used for increased spectral sensitivity, then the spectral sensitivity is improved, but the device cost significantly increases
Solution Approach 1:
The patent combines multiple detector functionalities into a single array of thyristor detector devices with complementary modulation doped quantum well interfaces. This single array integrates the spectral detection capabilities that would otherwise require separate silicon and GaAs photodiode arrays, thereby reducing device cost while maintaining broad spectral sensitivity from 500 nm to 1650 nm
Solution Approach 2:
The thyristor detector array serves multiple functions simultaneously: it detects radiation across a broad spectral range (500-1650 nm), generates digital electrical signals, and operates in both setup and signal acquisition modes. This multi-functionality eliminates the need for multiple specialized detector arrays, reducing overall device cost while maintaining comprehensive spectral sensitivity
2Measurement precision
If complex signal processing circuitry is used to process outputs of radiation detectors, then the angle-of-arrival determination is improved, but the device cost and manufacturing complexity increase
Solution Approach 1:
The thyristor detector devices generate their own digital electrical signals directly from the absorbed radiation energy, eliminating the need for external complex signal processing circuitry. The devices self-reset in setup mode and self-trigger in signal acquisition mode, providing built-in signal processing functionality that simplifies the overall device architecture while maintaining precise angle-of-arrival determination
3Ease of manufacture
If a single array of thyristor detectors is used instead of multiple detector arrays, then the device cost is reduced, but the spectral sensitivity coverage must be maintained across 500 nm to 1650 nm
Solution Approach 1:
The patent employs complementary modulation doped quantum well interfaces within the thyristor detector structure, combining n-type and p-type interfaces that respond to different portions of the spectral range. This composite structure enables a single detector array to maintain broad spectral sensitivity coverage from 500 nm to 1650 nm while reducing device cost compared to multiple separate detector arrays
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a cost-effective and efficient method for detecting laser irradiation with high angular resolution by using a single array of thyristor detectors, reducing the need for multiple detector arrays and complex signal processing, while maintaining broad spectral sensitivity.
Implementation Method 1
photocurrent is generated by the thyristor detector device in response to the absorption of incident electromagnetic radiation therein
Implementation Method 2
The first-type modulation doped quantum well structure creates an inversion channel for the electrons, while the second-type modulation doped quantum well structure creates an inversion channel for holes
Data Source
AI summary
An array of thyristor detector devices is provided having an epitaxial growth structure with complementary types of modulation doped quantum well interfaces located between a P+ layer and an N+ layer. The thyristor detector devices operate over successive cycles that each include a sequence of two distinct modes: a setup mode and a signal acquisition mode. During the setup mode, the n-type quantum well interface and/or the p-type quantum well interface is(are) substantially emptied of charge. During the signal acquisition mode, photocurrent is generated by the thyristor detector device in response to the absorption of incident electromagnetic radiation therein, which can induce the thyristor detector device to switch from an OFF state to an ON state. The OFF/ON state of the thyristor detector device produces an output digital electrical data that corresponds to the amount of incident radiation absorbed by the thyristor detector device during the signal acquisition mode of the current cycle. In the preferred embodiment, the array of thyristor detector devices is part of a monolithic integrated circuit that includes additional electronic circuitry and/or optical components. Moreover, the array of thyristor detector devices is preferably part of a monolithic integrated circuit for high angular resolution laser irradiation detection.