Vertical Thyristor ESD Protection With Independent Lateral Triggering

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Solution Overview

Problem

Conventional ESD protection devices face challenges in tuning breakdown voltage without affecting other metrics, and high voltage ESD protection devices are difficult to customize for different power components, leading to inefficiencies in protecting high voltage circuitry.

Innovation Solution

A semiconductor device comprising a vertical thyristor and a lateral trigger element, where the lateral trigger element is independent of the vertical protection device and can be engineered to switch faster and at a lower threshold voltage, allowing for separate optimization of trigger voltage and holding current, thereby improving ESD protection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional ESD protection devices are used, then basic protection is provided, but breakdown voltage cannot be tuned without affecting other metrics

Engineering Contradiction:

Improvebreakdown voltage tuningVSAvoidcustomization for different power components

Core Design Contradiction:

Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The protection device is segmented into two independent functional blocks: a vertical protection device (thyristor) and a lateral trigger element. This segmentation allows independent optimization of each component - the vertical device handles breakdown voltage characteristics while the lateral element controls trigger behavior, resolving the contradiction between precise voltage tuning and adaptability.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The device incorporates dynamic control capabilities through the lateral trigger element, which can be engineered to switch at different threshold voltages and speeds. This dynamic adjustability enables customization for different power components while maintaining precise breakdown voltage control through separate optimization of each element.

Inventive Principle:

Principle #15Dynamics

2Reliability

If high voltage ESD protection devices are used, then protection capability is improved, but device complexity increases making customization difficult

Engineering Contradiction:

ImproveESD protection capabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

By dividing the protection function into a vertical thyristor structure for high voltage protection and a separate lateral trigger element for control, the device achieves high ESD protection capability while maintaining relatively simple individual component structures that are easier to customize.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent merges the vertical protection device and lateral trigger element into a single integrated structure sharing common substrates and processing steps, achieving high protection capability while keeping the overall device complexity manageable through shared fabrication processes.

Inventive Principle:

Principle #5Merging (Combining)

3Manufacturing precision

If lateral trigger element is added, then trigger voltage and holding current can be independently optimized, but device area increases

Engineering Contradiction:

Improveindependent optimization of trigger voltage and holding currentVSAvoiddevice area

Core Design Contradiction:

Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The lateral trigger element is designed with localized functionality, concentrating the trigger control functions in a compact lateral structure that shares space with the vertical protection device, enabling independent optimization of trigger parameters with minimal additional area.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The lateral trigger element is nested within or adjacent to the vertical protection device structure, with both elements sharing common substrates and processing steps, allowing independent optimization of trigger characteristics while minimizing the total device footprint through spatial efficiency.

Inventive Principle:

Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables more robust and efficient ESD protection by allowing independent optimization of trigger voltage and holding current, enhancing the device's ability to protect high voltage circuitry without hindering normal operating conditions.

Implementation Method 1

The lateral trigger element is for triggering the vertical protection device

Methodology Applied

Scientific EffectElectrical signal transmission: Conduction (electrical)

Implementation Method 2

ESD can happen due to sudden discharge of charge from a charged body

Methodology Applied

Scientific EffectElectrostatic discharge: Electrostatic Discharge

Implementation Method 3

Avalanche diodes are commonly used for ESD protection

Methodology Applied

Scientific EffectAvalanche breakdown: Avalanche Breakdown

Data Source

PatentUS12009361B2Protection devices with trigger devices and methods of formation thereof

Publication Date: 2024.06.11 INFINEON TECHNOLOGIES AG

AI summary

A method of forming a semiconductor device includes forming a first vertical protection device comprising a thyristor in a substrate, forming a first lateral trigger element for triggering the first vertical protection device in the substrate, and forming an electrical path in the substrate to electrically couple the first lateral trigger element with the first vertical protection device.