Thyristor Gate Drive Circuit With Voltage Detection Switch Timing
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Solution Overview
Problem
Existing thyristor driving methods suffer from conduction and driving dead zones due to delayed signal provision and response time, leading to inefficiencies in energy consumption and harmonic pollution.
Innovation Solution
A semi-controllable device driving method and apparatus that utilizes a voltage detection switch connected in series with the thyristor, turning on when the potential difference is not greater than the on-state voltage and turning off after the thyristor is on, along with a semiconductor switch and capacitor configuration to minimize dead zones and enhance response speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If voltage detection circuit controls electronic switch to be turned on only when detecting that voltage at two ends of thyristor is greater than on-state voltage, then driving power is reduced, but driving dead zone increases due to lagged driving signal
Solution Approach 1:
The patent applies preliminary action by detecting the voltage across the thyristor and activating the electronic switch in advance, before the thyristor actually turns on. The voltage detection circuit monitors the main loop voltage, and when it exceeds the on-state voltage threshold, the electronic switch is turned on to provide the driving signal to the thyristor gate. This preliminary activation eliminates the dead zone by ensuring the thyristor receives its trigger signal immediately when voltage conditions are met, rather than waiting for the thyristor to naturally turn on.
2Device complexity
If voltage detection circuit uses threshold-based control, then circuit complexity is reduced, but response time increases due to threshold comparison delay
Solution Approach 1:
The patent applies self-service by using the thyristor's own on-state voltage characteristic as the detection threshold. The voltage detection circuit directly monitors the voltage across the thyristor terminals, and when this voltage naturally rises above the known on-state voltage level (typically 1.1-1.9V), the comparison is automatically satisfied and the electronic switch turns on. This eliminates the need for external threshold setting circuits or complex reference voltage generators, as the system uses the intrinsic electrical property of the thyristor itself for detection.
Data Source
AI summary
A semi-controllable device driving method and apparatus and a hybrid device of the present disclosure belong to the electrical field, and are particularly a driving method, with no driving dead zone or with an extremely small driving dead zone, that is applicable to a semi-controllable device such as a thyristor; a semi-controllable driving apparatus, with no conduction dead zone or with an extremely small conduction dead zone, that is applicable to a driving loop of a semi-controllable device such as a thyristor; and a hybrid device with no conduction dead zone or with an extremely small conduction dead zone. In the semi-controllable device driving method, a voltage detection switch is used; an input end of the voltage detection switch is connected to two ends of a semi-controllable device that needs to be driven; the voltage detection switch is connected, in series, in a driving loop of the semi-controllable device; the voltage detection switch is turned on when a potential difference at the two ends of the semi-controllable device is not greater than an on-state voltage of the semi-controllable device; and the voltage detection switch is turned off after detecting that the semi-controllable device is turned on. The present disclosure has an advantage of no driving dead zone or an extremely small driving dead zone.