Vertical Thyristor with Integrated Schottky Diode for High-Frequency Operation
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Solution Overview
Problem
Existing high-frequency thyristor control structures face limitations in miniaturization and increased frequency operations, with conventional diodes consuming significant silicon surface area and increasing costs.
Innovation Solution
A vertical thyristor structure integrating a Schottky diode with a lightly-doped P-type layer extending around the base well, allowing for high-frequency operation up to hundreds of MHz, while maintaining desired thyristor characteristics and reducing silicon surface area consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional diodes are used in the gate-cathode circuit, then the thyristor can operate at high frequency, but the silicon surface area consumption increases and cost increases
Solution Approach 1:
The patent merges the Schottky diode and thyristor into a single integrated structure where the Schottky diode is formed using the same semiconductor substrate and fabrication processes as the thyristor. This integration eliminates the need for separate diode components and reduces the overall silicon surface area required while maintaining high-frequency operation capability.
Solution Approach 2:
The lightly-doped N-type substrate serves multiple functions: it acts as the substrate for the thyristor structure and simultaneously forms the cathode region for the Schottky diode. This multi-functionality reduces the total component count and silicon area consumption while enabling high-frequency operation through the Schottky diode's low junction capacitance.
2Volume of moving object
If the frequency of the control signal is increased to miniaturize the transformer, then the transformer size is reduced, but the thyristor structure becomes more complex
Solution Approach 1:
The patent combines the Schottky diode and thyristor into a monolithic integrated structure fabricated on the same N-type substrate. This merging approach actually simplifies the overall device architecture compared to using separate components, as it eliminates the need for additional packaging, interconnections, and assembly steps while enabling the high-frequency operation needed for transformer miniaturization.
3Area of stationary object
If a Schottky diode is integrated with the thyristor, then silicon surface area is reduced and cost is reduced, but the manufacturing precision requirements increase
Solution Approach 1:
The patent specifies precise doping level parameters for each region (substrate: 10^14 to 10^15 at./cm³, lightly-doped P-type layer: 10^16 to 10^17 at./cm³, lightly-doped N-type region: 10^18 to 10^19 at./cm³). By defining these specific parameter ranges, the patent enables standardized fabrication processes that can achieve the required manufacturing precision through controlled doping techniques.
Solution Approach 2:
The patent creates different doping levels and material properties in different regions of the semiconductor structure. The lightly-doped N-type substrate, lightly-doped P-type layer, and lightly-doped N-type region each have optimized doping levels tailored to their specific functions, allowing the integrated structure to achieve both area reduction and reliable high-frequency performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient high-frequency operation with reduced silicon usage and cost, improving breakdown voltage and maintaining desired thyristor properties.
Implementation Method 1
a Schottky contact on the lightly-doped N-type region connected to a control terminal
Data Source
AI summary
A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.