Stacked Semiconductor Layout Using a Thermal Interposer for THz Heat
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Solution Overview
Problem
High-frequency semiconductor devices, such as those operating in the terahertz band, face challenges with increased power consumption and heat generation, leading to temperature rises that can degrade operational stability and reduce device lifespan due to higher circuit density and transmission line losses.
Innovation Solution
A semiconductor device is designed with a stacked structure comprising a semiconductor substrate for the antenna, a control circuit substrate, and an interposer board with high thermal conductivity, which efficiently dissipates heat generated by the semiconductor elements and control circuits, thereby reducing temperature rises and improving stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the antenna size is decreased to operate in high frequency regions, then the wavelength compatibility is improved, but the circuit density increases and transmission line loss increases
Solution Approach 1:
The patent transitions from a planar layout to a three-dimensional stacked configuration, placing the antenna circuit and control circuit on different substrates (first and second structures) bonded together. This vertical arrangement shortens transmission lines by reducing the physical distance between components, thereby reducing transmission line loss while maintaining high-frequency operation capability.
2Speed
If circuit density is increased to reduce antenna size, then the wavelength compatibility is improved, but power consumption and heat generation increase
Solution Approach 1:
The patent introduces a third structure (interposer board) with high thermal conductivity as an intermediary between the antenna circuit substrate and control circuit substrate. This interposer board includes a heat dissipation structure that actively conducts heat away from the dense circuits, enabling high circuit density for high-frequency operation while controlling temperature rise through efficient thermal management.
3Volume of moving object
If the antenna and control circuit are integrated into a small package, then the device size is reduced, but heat dissipation becomes more difficult
Solution Approach 1:
The patent applies different material properties to different parts of the stacked structure. The third structure (interposer board) is specifically designed with high thermal conductivity material and includes a heat dissipation structure concentrated in the region where heat generation is highest. This localized thermal management approach enables effective heat dissipation in the compact stacked package without requiring the entire package to be large.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses temperature rises and enhances the operational stability and lifespan of high-frequency semiconductor devices by efficiently dissipating heat through the use of a high thermal conductivity interposer board, improving reliability and performance.
Implementation Method 1
the third structure has a higher thermal conductivity than the first structure and the second structure
Data Source
AI summary
A semiconductor device in which a first structure that includes a first semiconductor substrate on which a semiconductor element and an antenna configured to oscillate or receive an electromagnetic wave are arranged, a second structure that includes a second semiconductor substrate on which a control circuit configured to control the semiconductor element is arranged, and a third structure that has a first bonding surface bonded to the first structure and a second bonding surface bonded to the second structure are stacked, is provided. A first conductor plug electrically connected to the semiconductor element and reaching the first bonding surface is arranged in the first structure, the third structure includes a base material layer and a conductor layer stacked on each other, and the third structure has a higher thermal conductivity than the first structure and the second structure.