Low-Temperature Ti Precursor for Thin Film Deposition
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Solution Overview
Problem
Conventional Ti precursors require high deposition temperatures for forming Ti-containing thin layers, which can damage devices, increase production costs, and extend process time, while also failing to achieve suitable electrical properties at lower temperatures.
Innovation Solution
A Ti precursor represented by a specific chemical formula, allowing for deposition at temperatures between 150° C. and 200° C., formed by reacting a Ti-containing compound with a C7-aromatic compound using a Grignard reagent, enabling the formation of Ti-containing thin layers with excellent electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional Ti precursors are used for deposition, then Ti-containing thin layers can be formed, but high deposition temperatures (300-375°C or higher) are required which can damage devices and increase production costs
Solution Approach 1:
The patent modifies the chemical structure of the Ti precursor by introducing specific ligands (β-diketonate or alkoxide) with particular substituents (R1-R6 groups including aryl, alkyl, and heteroatom-containing groups). These structural parameter changes reduce the thermal stability of the precursor, enabling decomposition and deposition at lower temperatures (150-200°C) while maintaining film quality and device integrity
Solution Approach 2:
The patent creates a composite molecular structure combining Ti center with organic ligands containing specific functional groups. This composite structure allows the precursor to decompose at lower temperatures while still forming high-quality Ti-containing thin layers, resolving the contradiction between low deposition temperature and film quality
2Reliability
If high deposition temperatures are used to form Ti-containing thin layers, then suitable electrical properties can be achieved, but device damage and increased production costs occur
Solution Approach 1:
By changing the chemical parameters of the Ti precursor (introducing specific ligands with controlled stability), the decomposition temperature is reduced to 150-200°C. This allows the formation of Ti-containing thin layers with suitable electrical properties at lower temperatures, avoiding device damage while maintaining performance
3Manufacturing precision
If conventional Ti precursors are used, then Ti-containing thin layers can be deposited, but the process time and production costs increase
Solution Approach 1:
The modified Ti precursor structure enables deposition at lower temperatures (150-200°C), which reduces the thermal budget and allows for faster processing cycles. The precursor maintains sufficient stability for handling but decomposes readily at the deposition temperature, enabling efficient thin layer formation with reduced process time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Ti precursor allows for the formation of Ti-containing thin layers with excellent electrical properties at significantly lower temperatures, minimizing device damage, reducing production costs and time, and facilitating the deposition of other low-temperature precursors, such as Pb, Zr, Bi, and La.
Implementation Method 1
chemical vapor deposition (CVD) employing a Ti precursor is a process in which after the Ti precursor is vaporized, the desired thin layer made of solid material is synthesized through chemical reaction
Data Source
AI summary
A Ti-precursor for forming a Ti-containing thin layer represented by the formula I below, a method of preparing the same, a method of preparing a Ti-containing thin layer by employing the Ti-precursor and the Ti-containing thin layer are provided:whereinX1 and X2 are independently F, Cl, Br or I; n is 0, 1, 2, 3, 4 or 5; m is 0, 1, 2, 3, 4, 5, 6 or 7; and R1 and R2 are independently a linear or branched C1-10 alkyl group. The Ti precursor for forming the Ti-containing thin layer can be deposited at a deposition temperature of approximately 150° C.˜200° C., and a Ti-containing thin layer with a high performance character can be prepared.