Ti-Ta-O Tunneling Barrier Layer for High ΔR/R
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Solution Overview
Problem
Existing tunneling magnetic detecting elements face challenges in increasing the rate of change in resistance (ΔR/R) without altering the configuration of the pinned or free magnetic layers, as increasing Fe concentration in the enhancing layer degrades operation stability.
Innovation Solution
A tunneling magnetic detecting element is designed with an insulating barrier layer composed of Ti-Ta-O, where the Ta concentration is between 0% and 7% of the total Ti and Ta, allowing for increased ΔR/R without modifying the pinned or free magnetic layer configurations, achieved by forming a layered structure with titanium and tantalum layers and oxidizing them to create the Ti-Ta-O barrier.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the Fe concentration in the enhancing layer is increased to improve the rate of change in resistance (ΔR/R), then the ΔR/R increases, but the magnetostriction of the free magnetic layer increases and operation stability degrades
Solution Approach 1:
The invention changes the material composition parameters of the insulating barrier layer by incorporating Ta elements with specific concentration ranges (0-7 at%) to modify the tunneling characteristics without altering the magnetic layer configurations. This parameter change in the barrier layer achieves improved ΔR/R while maintaining operational stability.
Solution Approach 2:
The invention uses a composite insulating barrier layer composed of Ti-Ta-O materials, combining titanium and tantalum oxides in specific proportions. This composite material approach allows optimization of tunneling properties through compositional control while keeping the magnetic layer structures intact, thereby improving ΔR/R without compromising stability.
2Measurement precision
If the configuration of the pinned magnetic layer or free magnetic layer is changed to improve the rate of change in resistance (ΔR/R), then the ΔR/R can be increased, but the device complexity increases
Solution Approach 1:
The invention introduces the insulating barrier layer as an intermediary element between the pinned and free magnetic layers. By modifying this intermediate layer's composition (adding Ta to Ti-O), the tunneling properties are improved without requiring changes to the magnetic layer configurations, thus achieving enhanced ΔR/R while maintaining structural simplicity.
Solution Approach 2:
Instead of changing the magnetic layer configurations, the invention changes the compositional parameters of the insulating barrier layer. By controlling the Ta concentration (0-7 at%) in the Ti-Ta-O barrier layer, the tunneling characteristics are optimized, achieving improved ΔR/R without increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the rate of change in resistance (ΔR/R) beyond existing technology levels while maintaining the stability of the magnetic layers, ensuring effective detection of magnetic fields without compromising the element's operational stability.
Implementation Method 1
A tunneling magnetoresistive element uses a tunneling effect to generate changes in resistance
Implementation Method 2
forming an insulating barrier layer composed of Ti—Ta—O by oxidizing the at least one Ti layer and the at least one Ta layer
Data Source
AI summary
A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.