Tie-off Dummy Gate Layout for Semiconductor Leakage Control
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Solution Overview
Problem
The increasing complexity of manufacturing semiconductor devices at a miniaturized scale leads to issues such as high yield loss, reduced reliability of electrical interconnections, and low testing coverage, necessitating improvements in device robustness, manufacturing cost, and processing time.
Innovation Solution
The implementation of a layout method and manufacturing process that utilizes different gate structure materials and configurations for P-FET and N-FET regions, along with a tie-off scheme to turn off dummy gate structures at cell boundaries, optimizing leakage control and performance of individual FET regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If manufacturing processes are simplified to reduce complexity, then processing time and cost decrease, but manufacturing precision and device reliability deteriorate
Solution Approach 1:
The patent segments the gate structure fabrication into distinct stages: forming a mandrel structure, depositing first and second gate dielectric layers with different properties, selectively removing portions, and forming separate first and second gates. This segmentation allows each stage to be optimized independently, maintaining high manufacturing precision while providing a systematic approach that reduces overall process complexity.
Solution Approach 2:
The patent applies local quality by creating different gate dielectric layer configurations in different regions of the device. The first gate dielectric layer has different properties than the second gate dielectric layer, allowing each gate structure (first gate and second gate) to have locally optimized characteristics suited to its specific functional requirements, thereby maintaining high precision without requiring a completely complex uniform process.
2Device complexity
If gate structures are removed or tied-off to reduce device complexity, then manufacturing steps decrease, but leakage control and reliability worsen
Solution Approach 1:
The patent introduces gate dielectric layers as intermediary structures between the mandrel and the final gate configurations. These dielectric layers serve as mediators that enable controlled removal and tying-off of gate structures while maintaining electrical isolation and preventing leakage. The first and second gate dielectric layers act as intermediaries that facilitate the transformation from a continuous gate to separate, controlled gate structures without compromising reliability.
Solution Approach 2:
The patent employs parameter changes by modifying the properties and configurations of gate dielectric layers at different stages. The first gate dielectric layer and second gate dielectric layer have different material properties, thicknesses, and coverage areas. By changing these parameters selectively, the patent enables controlled gate formation and tying-off processes that maintain reliability while reducing unnecessary gate structures.
3Ease of manufacture
If uniform gate structures are used across all regions, then manufacturing ease increases, but performance optimization of individual FET regions deteriorates
Solution Approach 1:
The patent implements local quality by creating distinct first and second gate dielectric layers with different properties in different regions. This allows the first gate and second gate to have locally optimized characteristics - such as different dielectric constants, thicknesses, or material compositions - tailored to the specific electrical requirements of each FET region, thereby achieving performance optimization without sacrificing manufacturing feasibility.
Solution Approach 2:
The patent segments the gate dielectric structure into multiple layers (first gate dielectric layer and second gate dielectric layer) that can be independently configured and processed. This segmentation enables different fabrication approaches for different gate regions while using a unified overall process framework, thus maintaining ease of manufacture through systematic processing while achieving region-specific performance optimization.
Data Source
AI summary
A layout method includes: providing a library comprising a first cell and a second cell, wherein each of the first and second cells includes: a first active region and a second active region extending in a first direction; a first cell-edge gate structure and a second cell-edge gate structure extending in a second direction; and a third cell-edge gate structure and a fourth cell-edge gate structure extending in the second direction, wherein each of the first and second cell further includes one of a tie-off conductive line or a tie-off marker layer on each of the first and second cell-edge gate structures. The layout method further includes: generating a design layout by placing and abutting the first cell and the second cell; updating the design layout by performing a post-processing step on the tie-off conductive line and the tie-off marker layer of each of the first and second cells.