Semiconductor Tier Decoupling Structure for Alignment and Low Capacitance

The patent applies fluorescent materials to alignment marks that change their optical properties under specific excitation wavelengths. The fluorescent alignment marks emit light at different wavelengths than the excitation source, enabling enhanced optical recognition and differentiation from surrounding structures during wafer fabrication, thereby improving measurement precision and yield

The patent introduces fluorescent materials as intermediary substances between the alignment mark structure and the optical detection system. These fluorescent materials act as mediators that convert incident light into detectable fluorescent signals, enhancing the optical contrast and recognition capability without modifying the underlying alignment mark geometry

The patent changes the dielectric constant parameter of the decoupling unit material by using low-k dielectric materials with dielectric constants significantly lower than conventional materials. This parameter change reduces the parasitic capacitance formed between adjacent conductive features, thereby improving device performance and reliability

The patent employs composite low-k dielectric materials that combine organic and inorganic components to achieve both low dielectric constant and mechanical reliability. These composite materials provide optimized electrical properties for reducing parasitic capacitance while maintaining structural integrity and manufacturability