Tilted Body Contact Structure for Vertical Channel Transistors
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Solution Overview
Problem
Existing semiconductor transistor devices with vertical channels face challenges in optimizing Ron (resistance) and reducing drain-induced barrier lowering (DIBL) and QGD (quasi-static drain-induced barrier lowering) due to the limitations of traditional body contact configurations.
Innovation Solution
A semiconductor transistor device with a tilted body contact region made of conductive material, where the body contact area is oriented neither perpendicular nor parallel to the vertical direction, allowing for optimized device performance by adjusting the tilt orientation to reduce electric field extension and enhance device characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a traditional body contact configuration is used, then the device structure is simple, but the Ron (resistance) cannot be optimized and DIBL (drain-induced barrier lowering) is reduced
Solution Approach 1:
The patent applies asymmetry by tilting the body contact area at a specific angle (e.g., 45 degrees) relative to the vertical direction, creating an asymmetric contact geometry that optimizes electric field distribution and reduces DIBL while maintaining manufacturability through standard etching processes
2Object-generated harmful factors
If the body contact area is tilted, then Ron is optimized and DIBL is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The patent changes the geometric parameter of the body contact area by introducing a tilt angle, which modifies the electric field distribution and reduces DIBL. The tilt angle can be adjusted as a design parameter to optimize performance while remaining compatible with standard semiconductor manufacturing processes
3Reliability
If the body contact area is tilted, then electrical contact efficiency is enhanced, but the contact area geometry becomes more complex
Solution Approach 1:
The patent introduces a tilt dimension to the body contact area, transforming it from a conventional vertical or lateral contact to a three-dimensional tilted structure. This dimensional change optimizes the electric field distribution and enhances electrical contact efficiency by reducing the depletion region extension
Data Source
AI summary
The application relates to a semiconductor transistor device, having a source region, a body region including a channel region extending in a vertical direction, a drain region, a gate region arranged aside the channel region in a lateral direction, and a body contact region made of an electrically conductive material, wherein the body contact region forms a body contact area, the body contact region being in an electrical contact with the body region via the body contact area, and wherein the body contact area is tilted with respect to the vertical direction and the lateral direction.