Tilted Etch ILD Patterning for Narrow Openings in Semiconductor Layouts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability due to increased complexity, particularly in forming narrower openings without additional photolithography processes.
Innovation Solution
A method involving a first and second tilted etch process is used to form patterned interlayer dielectric layers over transistors and resistors, reducing the need for additional photolithography and allowing narrower openings to be formed using wider hard mask openings, thereby simplifying the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography processes are used to form narrower openings, then manufacturing precision is improved, but device complexity increases due to additional process steps
Solution Approach 1:
The patent changes the etching parameters by introducing tilted incidence angles (e.g., 15-30 degrees from normal) to achieve anisotropic etching. This allows the formation of narrow openings with precise dimensions without requiring additional photolithography steps, thereby maintaining manufacturing precision while reducing process complexity
Solution Approach 2:
The patent introduces a new dimension to the etching process by tilting the incident angle, transforming the conventional vertical (1D) etching into a tilted (2D/3D) etching process. This dimensional change enables precise control of opening width and shape through angle control, achieving narrow openings without additional lithography layers
2Manufacturing precision
If additional photolithography processes are performed to form narrower openings, then manufacturing precision is improved, but productivity decreases due to increased process time
Solution Approach 1:
The patent merges the opening formation and patterning steps into a single tilted etching process. By combining what would traditionally require separate photolithography and etching steps into one operation, the method achieves narrow openings with high precision while maintaining high productivity through process integration
Solution Approach 2:
The patent performs preliminary patterning of the hard mask layer before the tilted etching process, allowing the etching step to directly create the final narrow openings. This preliminary action enables the main etching process to focus solely on precision opening formation, eliminating the need for subsequent additional photolithography steps and improving throughput
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the complexity of semiconductor device fabrication and improves yield by eliminating the need for additional photolithography steps and enabling the formation of narrower openings, thus enhancing the reliability and performance of semiconductor devices.
Implementation Method 1
performing a first tilted etch process and a second tilted etch process to form a patterned interlayer dielectric (ILD) layer
Data Source
AI summary
The present application discloses a semiconductor device including a first isolation structure, a second isolation structure, and a third isolation structure disposed in a semiconductor substrate. The semiconductor device further includes a transistor and a resistor. The transistor is disposed between the first isolation structure and the second isolation structure, and includes a gate electrode and a first source/drain (S/D) region. The resistor is disposed between the second isolation structure and the third isolation structure, and includes a resistor electrode. The first S/D region is disposed between the gate electrode and the second isolation structure, and is electrically connected to the resistor electrode.