Tilting Sample Stage for Ion Beam Etching
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Solution Overview
Problem
Existing sample preparation methods for scanning electron microscopes and transmission electron microscopes fail to effectively etch substances that are not easily etched by ion beams, resulting in unetched portions that obstruct the observation of desired cross sections.
Innovation Solution
An apparatus with an ion beam irradiation device, a tilting sample stage, a sample holder, and a shielding material that allows for precise positional adjustments and tilting of the sample during ion beam processing to ensure complete etching of the sample, preventing unetched portions from being left behind.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a shielding material is placed over the sample and ion beam processing is performed with the boundary defined by the shielding material, then a cross section is produced, but unetched portions remain when substances are not easily etched by the ion beam
Solution Approach 1:
The sample stage is made tiltable to dynamically change the angle between the ion beam and sample surface. This allows the ion beam to approach unetched portions from different angles, enabling complete removal of resistant substances while maintaining cross section integrity.
Solution Approach 2:
The invention introduces angular dimension by tilting the sample stage. Instead of processing from a single fixed direction, the ion beam can approach the sample from multiple angles, accessing previously hidden unetched portions that obstructed the cross section observation.
2Manufacturing precision
If ion beam processing is performed to etch the sample, then the sample is processed into shape, but considerable time is required when unetched portions must be removed
Solution Approach 1:
By making the sample stage tiltable, the system can quickly adjust the processing angle to target unetched portions without requiring additional processing steps. This dynamic adjustment reduces the total time needed to achieve complete etching while maintaining cross section quality.
Solution Approach 2:
The ion beam processing is performed in periodic cycles with alternating sample stage angles. This allows systematic removal of unetched portions from different directions, reducing total processing time compared to continuous single-angle processing.
3Ease of operation
If the sample is processed by ion beam with fixed angle, then processing is simple, but unetched portions create obstacles in observation
Solution Approach 1:
The sample stage tilting mechanism adds minimal operational complexity while dramatically improving cross section quality. The tilting function allows the operator to access unetched portions through simple angle adjustments, maintaining ease of operation while eliminating observation obstacles.
Solution Approach 2:
The invention changes the processing parameter from fixed angle to variable angle. By adjusting the sample stage tilt angle, the system can adapt to different sample characteristics and remove unetched portions without significantly complicating the overall processing procedure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enables thorough ion beam processing of samples, allowing for the observation of complete cross sections without unetched obstacles, thereby improving the quality of samples prepared for electron microscopy.
Implementation Method 1
an ion beam irradiation device disposed in a vacuum chamber used to irradiate a sample with an ion beam
Data Source
AI summary
Apparatus and method capable of preparing samples adapted for observations by electron microscopy. Each sample is ion-etched. During this process, the sample stage is tilted reciprocably left and right about a tilting axis. The sample is ion-etched together with a shielding material. The sample may contain a substance that is not easily etched by the ion beam. In the present invention, such unetched portions are not produced in spite of the presence of the substance. The substance can be separated from the sample. The ion beam is directed at the sample with the boundary defined by an end surface of the shielding material. Portions of the sample at a processing position and its vicinities are etched by the beam.