Tilting Substrate Heating Unit for Organic Solvent Removal
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Solution Overview
Problem
Conventional substrate processing methods face challenges in completely removing organic solvent films from substrates with fine and high-aspect-ratio patterns, leading to potential pattern collapse due to surface tension issues during spin drying.
Innovation Solution
A substrate processing apparatus that tilts the substrate while heating, using a processing liquid with lower surface tension to replace rinse liquid, and then tilts the substrate further to smoothly remove the organic solvent film without splitting it into droplets, reducing friction and preventing pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If spin drying is performed to remove rinse liquid from the substrate, then the substrate can be dried, but organic solvent film cannot be completely removed and pattern collapse may occur
Solution Approach 1:
The patent changes the physical parameters of the liquid medium by replacing rinse liquid with organic solvent having lower surface tension. This parameter change allows the liquid to be completely removed from fine patterns without causing pattern collapse, as the lower surface tension reduces the adhesive forces that cause collapse during drying
Solution Approach 2:
The patent replaces the mechanical spin drying system with a thermal field system. By applying heat to the substrate, the organic solvent is evaporated and removed without requiring high-speed rotation. This substitution eliminates the mechanical forces that can cause pattern collapse while achieving complete drying
2Object-affected harmful factors
If organic solvent is supplied onto the substrate before spin drying, then pattern collapse can be prevented, but fine patterns may still collapse due to insufficient protection
Solution Approach 1:
The patent replaces mechanical spin drying with thermal field-based heating and evaporation. This substitution provides gentler removal of organic solvent that does not subject fine patterns to the high centrifugal forces and mechanical stress of spin drying, thereby preventing pattern collapse while maintaining manufacturing precision
Solution Approach 2:
The patent changes the removal mechanism parameter from mechanical (spin drying) to thermal (heating and evaporation). This parameter change allows for complete removal of organic solvent film with lower stress on the patterns, preventing collapse while maintaining fine pattern integrity
3Loss of substance
If conventional spin drying is used, then rinse liquid can be removed, but organic solvent film removal is incomplete leading to watermarks and particles
Solution Approach 1:
The patent changes the physical parameter of the liquid from rinse liquid to organic solvent with different surface tension properties. This parameter change enables complete evaporation and removal without residues, eliminating watermarks and particles while maintaining high liquid removal efficiency
Solution Approach 2:
The patent replaces mechanical spin drying with thermal heating and evaporation. This substitution achieves more complete removal of organic solvent film without the mechanical limitations of spin drying, preventing surface defects like watermarks and particles while maintaining efficient liquid removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method ensures complete and smooth removal of organic solvent films from substrates, preventing pattern collapse and reducing defects like watermarks and particles, while maintaining uniform processing.
Implementation Method 1
a substrate heating unit arranged to heat the substrate from below the substrate to heat the liquid film on the substrate
Implementation Method 2
heating the substrate at a temperature equal to or higher than the boiling point of the processing liquid with the entire upper surface of the substrate being covered with the liquid film of the processing liquid to vaporize the processing liquid and form a gaseous phase between the liquid film of the processing liquid and the upper surface of the substrate
Data Source
AI summary
A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.