Non-destructive TIM Thickness Measurement via X-ray Contrast
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Solution Overview
Problem
Current methods for measuring thermal interface material (TIM) bond line thickness on silicon packages are either destructive, inaccurate, or prone to sample preparation artifacts, due to contrast similarities and high transmission rates of X-rays through Si and TIM materials.
Innovation Solution
A non-destructive 3D X-ray imaging method is employed, where a high-density material like gold is applied to the chip before capping, enhancing X-ray mass contrast to accurately measure TIM bond line thickness by calculating the distance from the lid to the top surface of the high-density material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If destructive measurement techniques are used, then measurement precision is improved, but productivity is worsened due to sample destruction
Solution Approach 1:
The patent replaces destructive mechanical measurement methods with non-destructive X-ray imaging technology. By substituting physical contact and sample destruction with electromagnetic radiation-based imaging, the system achieves accurate TIM bond line thickness measurement while preserving the sample for further use, thereby maintaining high measurement throughput without sacrificing precision
Solution Approach 2:
The patent introduces a high-density material layer as an intermediary between the TIM and the X-ray source/detector system. This intermediary layer enhances the X-ray mass contrast, enabling precise measurement of the TIM bond line thickness through non-destructive imaging while maintaining measurement accuracy that previously required destructive methods
2Productivity
If conventional X-ray imaging is used, then non-destructive measurement is achieved, but measurement precision deteriorates due to low mass contrast
Solution Approach 1:
The patent introduces a high-density material layer as an intermediary between the TIM and the X-ray source/detector system. This intermediary layer enhances the X-ray mass contrast, enabling precise measurement of the TIM bond line thickness through non-destructive imaging while maintaining measurement accuracy that previously required destructive methods
Solution Approach 2:
The patent changes the density parameter of the chip structure by adding a high-density material layer. This parameter change increases the X-ray mass contrast between different layers, allowing the imaging system to clearly distinguish and measure the TIM bond line thickness with high precision while maintaining non-destructive measurement capabilities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for accurate, non-destructive measurement of TIM bond line thickness with reduced turn-around time, eliminating artifacts, and improving data accuracy while maintaining high throughput and not altering silicon packaging processes.
Implementation Method 1
a high-density material, such as gold, with well-defined thickness is applied to a chip prior to capping. The high-density material acts to improve X-ray mass contrast
Data Source
AI summary
Aspects of the invention include a non-destructive bond line thickness measurement of thermal interface material on silicon packages. A non-limiting example computer-implemented method includes receiving a chip mounted on a laminate and depositing a high-density material on the chip. The computer-implemented method deposits a thermal interface material on the chip and lids the chip, and the laminate with a lid. The computer-implemented method X-rays the lid, the chip, and the laminate to produce an X-ray and measures, using a processor, from the X-ray a bond line thickness of the TIM as a distance from a bottom of the lid to a top surface of the high-density material.