Time-Domain Optical Metrology for Semiconductor Layer Separation

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Solution Overview

Problem

Existing optical scatterometry techniques struggle to characterize semiconductor devices with both periodic and aperiodic patterned structures due to their inability to distinguish between upper and lower layers effectively.

Innovation Solution

Creating a time-domain representation of wavelength-domain measurement data, selecting an earlier-in-time portion that excludes a later-in-time portion, and using model-based processing to determine parameters of interest for upper layers, excluding other layers, thereby enhancing characterization of semiconductor devices with mixed periodic and aperiodic structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If optical scatterometry is used to characterize semiconductor devices with both periodic and aperiodic structures, then measurement capability is improved, but layer differentiation capability deteriorates

Engineering Contradiction:
Improvemeasurement capabilityVSAvoidlayer differentiation capability
Core Design Contradiction:
Adaptability or versatilityVSMeasurement precision

Solution Approach 1:

The patent segments the time-domain representation of the optical signal into multiple portions based on time-of-flight. By dividing the measurement data into early-time and late-time portions, the system can selectively analyze reflections from different layer depths. This segmentation enables precise differentiation between upper periodic layers and lower aperiodic layers, resolving the layer differentiation problem while maintaining measurement versatility.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transforms the traditional wavelength-domain optical measurement into the time-domain representation. This dimensional transformation from frequency domain to time domain introduces a new dimension (time-of-flight) that provides depth information about reflected light. This additional dimensional information enables the system to distinguish between layers at different depths, thereby improving layer differentiation capability while maintaining adaptability to various device structures.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Measurement precision

If time-domain representation is created using both spectral amplitude and spectral phase, then measurement accuracy is improved, but data processing complexity increases

Engineering Contradiction:
Improvemeasurement accuracyVSAvoiddata processing complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts and utilizes both spectral amplitude and spectral phase information from the optical measurement data when creating the time-domain representation. By taking out and processing both components separately and then combining them, the system achieves higher measurement accuracy. The systematic extraction and processing of these two components, while increasing processing steps, provides comprehensive information for precise layer characterization.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables accurate measurement of upper layer properties in semiconductor devices with mixed periodic and aperiodic structures, improving metrology and inspection capabilities.

Implementation Method 1

measuring light reflected by the various layers of a semiconductor device

Methodology Applied
Scientific EffectLight reflection: Reflection

Implementation Method 2

creating a time-domain representation of wavelength-domain measurement data

Methodology Applied
Scientific EffectFourier transformation:

Data Source

PatentUS20260110975A1Time-domain optical metrology and inspection of semiconductor devices
Publication Date: 2026.04.23 NOVA MEASURING INSTR LTD
  • US20260110975A1 patent drawing
  • US20260110975A1 patent drawing
  • US20260110975A1 patent drawing

AI summary

Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.