Crystal Growth Control Using Time-Slice Feedback Adjustment
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Solution Overview
Problem
Current crystal growth processes face challenges in accurately controlling crystal growth parameters, such as temperature and pulling speed, which affect the quality of the crystal and the performance of devices made from them, necessitating improved methods for precise control.
Innovation Solution
A method and system that obtain actual and reference crystal parameters in real-time, calculate temperature and pulling control parameters based on these values, and adjust them in subsequent time slices to maintain precise control over crystal growth, utilizing a combination of real-time data and pre-set parameters to ensure accurate and efficient crystal growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If real-time monitoring and adjustment of temperature and pulling speed are implemented, then crystal growth control precision is improved, but system complexity increases
Solution Approach 1:
The patent implements a feedback control system where actual crystal parameters (mass, diameter, height, shape) are continuously monitored and compared with reference parameters. Based on the deviations detected, the system automatically adjusts temperature and pulling speed in real-time to maintain precise crystal growth control, resolving the contradiction by using feedback to achieve high precision without requiring overly complex manual intervention systems
Solution Approach 2:
The patent replaces manual mechanical adjustment of temperature and pulling speed with automated computational control. A crystal growth model calculates reference parameters, and a control system automatically determines adjustment amounts based on parameter deviations, substituting complex manual mechanical operations with streamlined computational algorithms that simplify the overall system while maintaining precision
2Manufacturing precision
If multiple crystal parameters are monitored and adjusted, then crystal quality is improved, but control difficulty increases
Solution Approach 1:
The patent merges the monitoring and control of multiple crystal parameters (mass, diameter, height, shape) into a unified control framework. The crystal growth model integrates all these parameters to calculate reference values, and the control system combines deviations across all parameters to determine coordinated adjustments of temperature and pulling speed, reducing control difficulty by unifying multiple measurements into a single integrated control process
Solution Approach 2:
The patent creates a universal control system that handles multiple crystal parameters through a single crystal growth model and control algorithm. This multi-functional system can monitor and adjust various parameters simultaneously using the same underlying methodology, making the control process more manageable despite the multiplicity of parameters involved
3Productivity
If automated control systems are used, then productivity is improved, but device complexity increases
Solution Approach 1:
The patent implements a self-service automated control system where the crystal growth model and control algorithm autonomously determine reference parameters and calculate adjustment amounts without external intervention. The system automatically monitors crystal parameters, compares them with references, and adjusts temperature and pulling speed on its own, improving productivity by eliminating manual operations while keeping the control logic relatively simple through self-contained algorithms
Data Source
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AI summary
The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.