Tin Amide Precursor Synthesis for EUV Lithography
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Solution Overview
Problem
Current methods for synthesizing tin (IV) compounds are inefficient and produce impurities, making them unsuitable for applications in microelectronic device manufacturing, particularly in extreme ultraviolet (EUV) lithography.
Innovation Solution
A method involving the contact of a tin (IV) alkoxide compound with a metal amide compound to form tin (IV) amide compounds, which are then used as precursors for forming tin-containing films suitable for microelectronic devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional methods are used to synthesize tin (IV) compounds, then the synthesis process can be completed, but the yield is low and impurities are produced
Solution Approach 1:
The patent changes the chemical parameters of the synthesis reaction by using specific reagents (metal amide compounds with formula M(NR''2)aXb where a+b=2 to 5) and controlling reaction conditions to achieve high yield and high purity tin (IV) amide compounds. The reaction parameters including stoichiometry and reaction conditions are optimized to eliminate impurities while maximizing productivity.
2Ease of manufacture
If conventional synthesis methods are used, then tin (IV) compounds can be produced, but the process is inefficient and produces impurities
Solution Approach 1:
The patent introduces metal amide compounds as intermediary reagents that facilitate the synthesis of tin (IV) amide compounds. These intermediary compounds enable the reaction to proceed efficiently while maintaining high product purity, resolving the contradiction between ease of manufacture and manufacturing precision.
3Productivity
If existing precursor methods are used, then microelectronic device manufacturing can proceed, but the precursors are impure and yield is low
Solution Approach 1:
The patent optimizes the chemical parameters of the precursor synthesis by using specifically designed metal amide compounds and controlling reaction conditions to achieve both high yield and high purity tin (IV) amide compounds, thereby improving both productivity and reliability of the precursors for microelectronic device manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the high-yield production of pure tin (IV) amide compounds, which serve as effective precursors for forming functionalized tin oxide films, enhancing the fabrication of microelectronic devices, especially in EUV lithography.
Implementation Method 1
contacting a tin (IV) alkoxide compound with a metal amide compound to form at least one reaction product
Data Source
AI summary
Methods are provided. A method comprises contacting a tin (IV) compound with a reagent to form at least one reaction product. The regent comprises at least one of a metal alkoxide compound, a metal amide compound, or any combination thereof. The at least one reaction product comprises at least one of a substituted tin (IV) amide compound, a substituted tin (IV) alkoxide compound, or any combination thereof. Various compositions and various compounds, among other things, are also provided.