Low-Temperature TiN Barrier Layer Deposition Using H2 Plasma
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Solution Overview
Problem
Existing methods for forming a TiN thin-film barrier layer in integrated circuits and capacitors require high temperatures, which can damage substrates and degrade device quality and performance.
Innovation Solution
A method using atomic layer deposition (ALD) that generates plasma at low temperatures (300-350°C) by injecting NH3-containing gas, purging, and applying RF power to form TiN thin-films, followed by hydrogen plasma to remove impurities, thereby forming a barrier layer without substrate damage and improving device quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high temperature (350°C or more) is used for TiN thin-film deposition, then the barrier layer can be formed, but the substrate or thin-film may be damaged by heat
Solution Approach 1:
The patent changes the temperature parameter from high (350°C or more) to low (below 350°C) while maintaining barrier layer formation quality. This is achieved by optimizing the plasma conditions and gas flow parameters to enable effective TiN deposition at reduced temperatures, thus preventing heat damage to the substrate while still forming a reliable barrier layer.
Solution Approach 2:
The patent replaces thermal energy with plasma energy for the deposition process. Instead of relying solely on high temperature to drive the chemical reactions for TiN formation, the invention uses plasma-enhanced chemical vapor deposition (PECVD) where plasma provides the activation energy needed for deposition at lower temperatures, substituting the mechanical/thermal system with a plasma-based system.
2Manufacturing precision
If high temperature is used for TiN thin-film formation, then deposition can occur, but degradation in quality or performance of device occurs
Solution Approach 1:
The patent optimizes multiple parameters including temperature (reduced to below 350°C), pressure, gas flow rates, and plasma power to achieve high-quality TiN thin-film deposition without compromising device performance. By carefully controlling these parameters in the low-temperature regime, the invention maintains manufacturing precision while improving device reliability.
Solution Approach 2:
The substitution of thermal deposition with plasma-enhanced deposition allows for better control over film quality and composition. The plasma process enables more uniform deposition, better stoichiometry control, and reduced thermal stress, all of which contribute to improved device quality without requiring high temperatures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for the formation of TiN thin-films at lower temperatures, preventing substrate damage and enhancing device performance by removing impurities, thus improving the quality and reliability of integrated circuits and capacitors.
Implementation Method 1
injecting a NH3-containing gas to be adsorbed onto the substrate
Implementation Method 2
generating plasma by using a H2 gas
Implementation Method 3
applying a RF power to an injection unit configured to inject the NH3-containing gas and the H2-containing gas
Implementation Method 4
injecting a Ti-containing gas toward the substrate to form a TiN thin-film on the substrate
Implementation Method 5
removing impurities on the TiN thin-film by injecting a H2 gas into the process space and generating plasma by using the H2 gas
Data Source
AI summary
In accordance with an exemplary embodiment, a method for forming a barrier layer, which forms a barrier layer on a substrate by generating plasma, includes: injecting a NH3-containing gas to be adsorbed onto the substrate; primarily purging of injecting a purge gas toward the substrate after the injecting of the NH3-containing gas is stopped; generating plasma by using a H2 gas; injecting a Ti-containing gas toward the substrate to form a TiN thin-film on the substrate; and secondarily purging of injecting a purge gas toward the substrate after the injecting of the Ti-containing gas is stopped, and the method form one process cycle of sequentially performing the injecting of the NH3-containing gas, the primarily purging, the generating of the plasma, the injecting of the Ti-containing gas, and the secondarily purging. In accordance with exemplary embodiments, a barrier layer made of a TiN thin-film may be formed by an ALD method at a low temperature. Thus, the substrate or the thin-film formed on the substrate may be prevented from being damaged by high-temperature heat. Thus, a device including the barrier layer may be prevented from being defected or improved in performance. Also, impurities on the barrier layer may be removed by generating hydrogen plasma. Thus, degradation in quality of the device or the barrier layer caused by the impurities may be prevented.