Selective Metal Oxide Deposition on TiN Electrodes With Si Inhibitor
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in effectively forming a dielectric layer on the lower electrodes of capacitors while minimizing the collapse of these electrodes due to their fine and narrow spacing, which existing methods struggle to address efficiently.
Innovation Solution
A method involving a base substrate with growth and non-growth regions, where a Si-based growth inhibitor is adsorbed on the non-growth region to prevent unwanted deposition, followed by selective formation of a metal oxide layer using atomic layer deposition, with optional hydrogenation processing to enhance selectivity, resulting in a SiTiON layer between the growth region and the metal oxide layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to form a dielectric layer on lower electrodes, then the dielectric layer can be formed, but the process becomes complex and deposition selectivity is poor, leading to electrode collapse
Solution Approach 1:
The patent applies preliminary action by pre-treating the substrate with a surface treatment layer containing silicon atoms before dielectric layer deposition. This preliminary modification of the substrate surface enables selective deposition of the dielectric layer on lower electrodes without requiring complex subsequent processing steps, thereby improving deposition selectivity while simplifying the overall process
Solution Approach 2:
The patent uses a surface treatment layer as an intermediary between the substrate and the dielectric layer. This intermediate layer containing silicon atoms mediates the deposition process by providing selective bonding sites that attract dielectric precursor molecules to lower electrodes while repelling them from other areas, achieving high deposition selectivity without complex process equipment
2Area of moving object
If the spacing between lower electrodes is reduced for down-scaling, then device density increases, but the electrodes become prone to collapse
Solution Approach 1:
The patent changes the chemical parameters of the substrate surface by introducing silicon-containing surface treatment layers. This parameter change modifies the surface energy and chemical reactivity, creating conditions where dielectric layers form selectively on lower electrodes even at reduced spacings, thereby maintaining electrode stability while enabling higher device density
Solution Approach 2:
The patent employs composite material structure consisting of the lower electrode, the silicon-containing surface treatment layer, and the dielectric layer. This composite structure provides both the mechanical support needed to prevent electrode collapse and the selective deposition properties required for high-density patterning, allowing reduced electrode spacing without sacrificing reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a simple and selective formation of the metal oxide layer, improving deposition selectivity and reducing the risk of electrode collapse, thereby enhancing the manufacturing process efficiency and quality of semiconductor devices.
Implementation Method 1
adsorbing a Si-based growth inhibitor on the surface of the non-growth region by supplying the Si-based growth inhibitor to the base substrate
Implementation Method 2
selectively forming a metal oxide layer on the growth region relative to the non-growth region by supplying a metal precursor and an oxidizing reactant gas to the base substrate
Implementation Method 3
performing hydrogenation processing on the structure on the base substrate while the Si-based growth inhibitor is adsorbed thereon by supplying a hydrogen-containing gas into the reaction chamber
Data Source
AI summary
A method of manufacturing a semiconductor device includes may include preparing a base substrate, adsorbing a Si-based growth inhibitor, and selectively forming a metal oxide layer. The base substrate may include a growth region including TiN and a non-growth region including Si. Surfaces of the growth region and the non-growth region may be exposed. The Si-based growth inhibitor may be adsorbed on an exposed surface of the non-growth region by supplying the Si-based growth inhibitor to the base substrate. The metal oxide layer may be selectively formed on the growth region relative to the non-growth region by supplying a metal precursor and an oxidizing reactant gas to the base substrate. The selectively forming the metal oxide layer on the growth region may include forming a SiTiON layer between the surface of the growth region and the metal oxide layer.