TiN Etchant Composition for Selective TiN-Tungsten Interconnection Etching
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Solution Overview
Problem
Current semiconductor device fabrication techniques face challenges in achieving fine-patterning and low resistance interconnections due to inadequate etching selectivity between titanium nitride and tungsten layers, leading to unreliable device integration.
Innovation Solution
A titanium nitride etchant composition comprising hydrogen peroxide, phosphoric acid, and a polyvalent amine compound with two or more nitrogen atoms is used to selectively etch the titanium nitride layer, providing an etching selectivity of 2.6 to 100, thereby accurately forming interconnections with reduced electrical resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching methods are used, then the etching process can be performed, but the etching selectivity between titanium nitride and tungsten layers is insufficient
Solution Approach 1:
The patent modifies the chemical composition parameters of the etching solution by incorporating hydrogen peroxide (1-30 wt%), phosphoric acid (20-80 wt%), and amine compounds (0.01-10 wt%) with two or more nitrogen atoms. This parameter change in the etchant composition achieves high etching selectivity of 2.6 to 100 between titanium nitride and tungsten layers, resolving the selectivity issue while maintaining process reliability
Solution Approach 2:
The patent creates a composite etching solution by combining multiple chemical components (hydrogen peroxide, phosphoric acid, and amine compounds) that work synergistically. This composite formulation enables selective removal of titanium nitride while preserving tungsten, achieving both high selectivity and reliable device integration
2Length of moving object
If fine-patterning techniques are implemented, then interconnection lines and spaces can be reduced, but the etching selectivity requirement becomes more stringent
Solution Approach 1:
The patent adjusts the chemical parameters of the etching solution by incorporating hydrogen peroxide, phosphoric acid, and amine compounds in optimized concentrations. This enables precise control of etching selectivity (2.6 to 100), which is critical for maintaining pattern fidelity when scaling down interconnection dimensions to achieve fine-patterning
3Reliability
If interconnection resistance is reduced, then device performance improves, but the formation process becomes more challenging
Solution Approach 1:
The patent modifies the etching process parameters through a chemically optimized solution containing hydrogen peroxide, phosphoric acid, and amine compounds. This enables precise formation of interconnection structures with controlled dimensions and minimal defects, achieving both low resistance and high manufacturing precision in the interconnection layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The etchant composition effectively enhances the etching selectivity between titanium nitride and tungsten layers, allowing for precise interconnection formation with improved reliability and reduced electrical resistance in semiconductor devices.
Implementation Method 1
hydrogen peroxide in an amount of 1 to 30 wt. %
Implementation Method 2
phosphoric acid in an amount of 20 to 80 wt. %
Data Source
AI summary
A titanium nitride etchant composition and a method of forming a semiconductor device using the same are provided. The titanium nitride etchant composition includes hydrogen peroxide, phosphoric acid, and an amine compound, wherein the amine compound includes two or more nitrogen atoms.