Tin-Based EUV Photoresist for High-Resolution Low-LER Patterns
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Solution Overview
Problem
Current chemically amplified photoresists face challenges with resolution, photospeed, and line edge roughness (LER) in extreme ultraviolet (EUV) lithography, particularly due to acid catalyzed reactions and reduced light absorbance, limiting their effectiveness in forming small feature sizes.
Innovation Solution
A semiconductor photoresist composition comprising an Sn-containing organometallic compound and a carboxylic acid compound, along with a solvent, which enhances sensitivity and coating properties, allowing for improved pattern formation with reduced LER.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If chemically amplified photoresists are used to achieve high sensitivity, then photospeed is improved, but resolution and line edge roughness deteriorate due to acid catalyzed reactions
Solution Approach 1:
The patent replaces the chemical amplification mechanism (acid catalyzed reactions) with a direct photochemical mechanism using tin-containing compounds. This substitution eliminates the acid catalyzed reaction pathway that causes image blurring and line edge roughness, while maintaining high sensitivity through the high EUV absorption cross-section of tin compounds.
Solution Approach 2:
The patent changes the fundamental chemical mechanism parameter from chemical amplification to direct photochemical reaction. By using tin-containing compounds that undergo direct photolysis upon EUV exposure, the system achieves high sensitivity without the detrimental acid catalyzed reactions, thereby improving both resolution and line edge roughness while maintaining photospeed.
2Speed
If chemically amplified photoresists are used to achieve high sensitivity, then photospeed is improved, but line edge roughness deteriorates due to stochastic effects
Solution Approach 1:
The patent substitutes the chemical amplification mechanism with a direct photochemical mechanism using tin-containing compounds. This replacement eliminates the stochastic effects associated with acid catalyzed reactions, resulting in improved line edge roughness while maintaining high photospeed through the high EUV absorption cross-section of tin compounds.
3Ease of operation
If traditional organic photoresists are used, then coating properties are maintained, but sensitivity deteriorates due to reduced light absorbance at 13.5 nm
Solution Approach 1:
The patent employs tin-containing compounds as the active photoresist material, which combines the desirable coating properties of organic materials with the high EUV absorption cross-section of inorganic tin compounds. This composite approach maintains good coating characteristics while achieving high sensitivity through the inherent high absorption cross-section of tin at 13.5 nm wavelength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves excellent sensitivity and coating properties, enabling the formation of fine patterns with high aspect ratios and reduced line edge roughness, suitable for EUV lithography.
Implementation Method 1
Recently, active research has been conducted for molecules containing tin that have excellent absorption of extreme ultraviolet rays
Implementation Method 2
As for an organotin polymer among them, alkyl ligands are dissociated by light absorption and/or secondary electrons produced thereby
Data Source
AI summary
Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including an Sn-containing organometallic compound, a carboxylic acid compound represented by Chemical Formula 1, and a solvent.