TiN Film Deposition Sequence for Continuous Substrate Coverage
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Solution Overview
Problem
The formation of a continuous titanium nitride (TiN) film on substrates is challenging due to its tendency to grow in an island shape, leading to low coverage, which is problematic for applications like NAND flash memory and DRAM word lines.
Innovation Solution
A method involving the sequential supply of gases containing hydrogen and oxygen, nitrogen and hydrogen, a halogen element, and a reaction gas to the substrate, followed by a film-forming process, enhances the coverage of the TiN film by forming a continuous layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a titanium nitride (TiN) film is formed using conventional methods, then the film formation process is simple, but the film grows in an island shape resulting in low coverage
Solution Approach 1:
The patent applies preliminary action by performing surface treatment with hydrogen and oxygen gases before TiN film deposition. This pre-treatment modifies the substrate surface to promote better nucleation and continuous film growth, thereby improving coverage without complicating the main deposition process
Solution Approach 2:
The patent changes process parameters by introducing multiple gas phases (hydrogen, oxygen, nitrogen) with controlled flow rates and sequences. These parameter changes optimize the chemical environment during deposition, enabling continuous film growth while maintaining process control
2Strength
If a titanium nitride (TiN) film is formed using conventional methods, then the process is straightforward, but the film adhesion to the substrate is insufficient
Solution Approach 1:
The patent performs preliminary surface modification by exposing the substrate to hydrogen and oxygen gases before TiN deposition. This creates a more reactive and adherent surface layer, ensuring strong bonding between the substrate and the subsequent TiN film
Solution Approach 2:
The patent introduces hydrogen and oxygen gases as intermediary substances that mediate between the substrate and TiN film. These gases create an intermediate surface layer that enhances interfacial bonding and improves overall film adhesion
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves the coverage and adhesion of the TiN film on substrates, ensuring better performance in devices like NAND flash memory and DRAM by forming a uniform and continuous film.
Implementation Method 1
supplying a first gas containing hydrogen and oxygen to a substrate in a process chamber
Implementation Method 2
supplying a second gas containing nitrogen and hydrogen to the substrate
Implementation Method 3
forming a film on the substrate by performing (c) and (d) after performing (e)
Data Source
AI summary
There is provided a technique that includes: (a) supplying a first gas containing hydrogen and oxygen to a substrate in a process chamber; (b) supplying a second gas containing nitrogen and hydrogen to the substrate; (c) supplying a third gas containing a halogen element to the substrate; (d) supplying a reaction gas to the substrate; (e) performing (a) and (b); and (f) forming a film on the substrate by performing (c) and (d) after performing (e).