TiN Film Modification for Semiconductor Process Container Wall
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Solution Overview
Problem
In semiconductor manufacturing, the nucleation film used to enhance adhesion between tungsten films and insulating films can grow abnormally on the inner walls of process containers, leading to film peeling and particle generation due to cumulative film thickness and large crystal grain formation.
Innovation Solution
A substrate processing technique involving the formation of a titanium nitride film on substrates within a process container, followed by unloading and subsequent modification with a silicon or halogen-containing gas to form an amorphous layer on the container walls, preventing abnormal crystal growth and film peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a nucleation film is formed on the inner wall of the process container to enhance adhesion, then the adhesion between the tungsten film and insulating film is improved, but the nucleation film grows abnormally as large crystal grains leading to film peeling
Solution Approach 1:
The harmful function of the nucleation film growing on the process container wall is extracted and eliminated by selectively removing the film from the wall surface while preserving it on the substrate. This is achieved through a treatment process that targets the container wall specifically, preventing abnormal crystal grain growth and film peeling while maintaining the adhesion-enhancing function on the substrate.
Solution Approach 2:
The nucleation film is allowed to exist with different properties on different surfaces: on the substrate, it maintains its function of enhancing adhesion, while on the process container wall, it is prevented from abnormal growth. The treatment process creates local quality differences by selectively modifying the film on the container wall without affecting the film on the substrate.
2Strength
If the cumulative film thickness of the nucleation film increases, then the adhesion enhancement function is strengthened, but the nucleation film grows abnormally causing film peeling and particle generation
Solution Approach 1:
The treatment process converts the harmful effect of cumulative film thickness leading to abnormal growth and peeling into a beneficial outcome. By applying the treatment after film formation, the process eliminates the harmful peeling and particle generation while preserving the adhesion enhancement function, effectively transforming a problematic cumulative effect into a controlled and beneficial process.
Solution Approach 2:
The treatment process is performed as a preliminary action before subsequent processing steps to prevent abnormal crystal grain growth and film peeling. By treating the container wall immediately after film formation, the process prevents the development of harmful large crystal grains and peeling issues before they can affect subsequent manufacturing steps.
3Duration of action of stationary object
If the nucleation film is formed continuously on the process container, then the adhesion function is maintained, but the film grows abnormally as large crystal grains causing peeling
Solution Approach 1:
The treatment process is applied periodically after a certain number of film formation cycles to reset the container wall surface condition. This periodic intervention prevents continuous abnormal growth by regularly removing or modifying the accumulated film on the container wall, maintaining uniform crystal grain size while allowing continuous production to proceed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method suppresses film peeling and particle generation inside the process container, improves film stress uniformity, and enhances processing quality by modifying the TiN film on container walls to form a TiSiN or Si layer, reducing surface roughness and maintaining film continuity.
Implementation Method 1
supplying a modifying gas containing at least one selected from the group of silicon, metal, and halogen into the process container after the processed substrate is unloaded from the process container
Implementation Method 2
processing the substrate by supplying a processing gas into the process container to form a film containing titanium and nitrogen on the substrate
Data Source
AI summary
There is provided a technique that includes: (a) loading a substrate into a process container; (b) processing the substrate by supplying a processing gas into the process container to form a film containing titanium and nitrogen on the substrate; (c) unloading the processed substrate from the process container; and (d) supplying a modifying gas containing at least one selected from the group of silicon, metal, and halogen into the process container after the processed substrate is unloaded from the process container.