TiN Thin Film Deposition for Smooth Conformal Semiconductor Layers
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Solution Overview
Problem
There is a need for atomic layer deposition methods that can form titanium nitride (TiN) films with superior surface smoothness and step coverage, while maintaining or exceeding the electrical and physical properties of TiN films formed by physical vapor deposition (PVD) and chemical vapor deposition (CVD).
Innovation Solution
A cyclical vapor deposition process involving alternating exposures to titanium (Ti) and nitrogen (N) precursors at different pressures, where the initial film growth occurs at lower pressures to promote layer-by-layer growth, and subsequent growth occurs at higher pressures to enhance conformality and step coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If atomic layer deposition (ALD) is used to form conformal TiN films, then conformality is improved, but surface roughness and electrical conductivity deteriorate
Solution Approach 1:
The deposition process is divided into multiple sequential stages with different pressure conditions. The first stage uses lower pressure to promote layer-by-layer growth and reduce surface roughness, while the second stage uses higher pressure to enhance conformality and step coverage. This segmentation allows each stage to optimize for its specific goal without compromising the other.
Solution Approach 2:
The patent dynamically adjusts the deposition pressure during the ALD process. By changing pressure conditions between stages, the process adapts to achieve different film quality characteristics at different depths and locations, optimizing both surface roughness and conformality through dynamic parameter control.
2Manufacturing precision
If atomic layer deposition (ALD) is used to form conformal TiN films, then conformality is improved, but electrical conductivity deteriorates
Solution Approach 1:
The deposition process is divided into multiple sequential stages with different pressure conditions. The first stage uses lower pressure to promote layer-by-layer growth and reduce surface roughness, while the second stage uses higher pressure to enhance conformality and step coverage. This segmentation allows each stage to optimize for its specific goal without compromising the other.
Solution Approach 2:
The patent dynamically adjusts the deposition pressure during the ALD process. By changing pressure conditions between stages, the process adapts to achieve different film quality characteristics at different depths and locations, optimizing both surface roughness and conformality through dynamic parameter control.
3Reliability
If PVD or CVD is used to form TiN films, then electrical conductivity is improved, but conformality deteriorates
Solution Approach 1:
The patent changes key process parameters (pressure, temperature, precursor exposure timing) during the ALD process to achieve film quality comparable to PVD/CVD while maintaining conformality. Specifically, adjusting pressure between stages and optimizing precursor exposure conditions enables the ALD process to produce films with superior electrical conductivity while preserving the conformal deposition advantage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a combination of high conformality, low surface roughness, and reduced electrical resistivity in TiN films, surpassing the performance of conventional TiN films formed by PVD and CVD.
Implementation Method 1
forming on a semiconductor substrate a first portion of the thin film by exposing the semiconductor substrate to one or more first cyclical vapor deposition cycles
Implementation Method 2
forming on the first portion of the thin film a second portion of the thin film by exposing the semiconductor substrate to one or more second cyclical vapor deposition cycles
Data Source
AI summary
The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method a method of forming a thin film comprising titanium nitride (TiN) by a cyclical vapor deposition process comprises forming on a semiconductor substrate a TiN thin film by exposing the semiconductor substrate to one or more cyclical vapor deposition cycles each comprising an exposure to a Ti precursor at a Ti precursor flow rate and an exposure to a N precursor at a N precursor flow rate, wherein a ratio of the N precursor flow rate to the Ti precursor flow rate exceeds 3. The method is such that the TiN thin film has a preferential (111) crystalline texture such that an X-ray spectrum of the TiN thin film has a ratio of a peak height or an intensity of an X-ray diffraction peak corresponding to a (111) crystal orientation of TiN to a peak height or an intensity of an X-ray diffraction peak corresponding to a (200) crystal orientation of TiN that exceeds 0.4. Aspects are also directed to semiconductor structures incorporating the thin film and method of forming the same.