Tin Fluoride Photoresist Conversion for Fine Semiconductor Patterning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing semiconductor fabrication processes face challenges in achieving fine patterns due to insufficient etching tolerance and thickness of photoresist, necessitating additional film formation to compensate, which complicates the process.
Innovation Solution
A plasma treatment process using a gas containing fluorine is applied to convert a tin-based photoresist pattern into tin fluoride, enhancing its etching tolerance, thereby allowing for the formation of fine patterns without additional layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photoresist thickness is reduced to enable fine pattern formation through EUV patterning, then pattern resolution is improved, but etching tolerance deteriorates
Solution Approach 1:
The invention changes the chemical composition of the photoresist by converting tin (Sn) into tin fluoride (SnFx) through plasma treatment with fluorine-containing gas. This parameter change in material composition significantly improves etching tolerance while maintaining the thin thickness required for fine pattern resolution.
Solution Approach 2:
The invention creates a composite structure by forming tin fluoride (SnFx) within the tin-based photoresist matrix. This composite material combines the fine pattern formation capability of thin photoresist with the enhanced etching tolerance of tin fluoride, resolving the contradiction between pattern resolution and etching tolerance.
2Reliability
If additional film layers are formed on photoresist to compensate for insufficient etching tolerance, then etching tolerance is improved, but process complexity increases
Solution Approach 1:
The invention extracts the etching tolerance enhancement function from a separate additional film layer and integrates it directly into the photoresist material itself through tin fluoride formation. This eliminates the need for separate compensatory film layers and simplifies the overall process.
Solution Approach 2:
The invention merges the etching tolerance enhancement function with the photoresist material by forming tin fluoride within the photoresist matrix. This consolidation combines pattern definition and etching protection into a single integrated material, eliminating additional process steps.
3Reliability
If photoresist thickness is increased to improve etching tolerance, then etching tolerance is improved, but pattern resolution deteriorates
Solution Approach 1:
The invention changes the material composition parameter by converting tin to tin fluoride, which fundamentally alters the etching resistance properties. This allows thin photoresist layers to achieve high etching tolerance without increasing thickness, thereby maintaining fine pattern resolution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves etching tolerance, enabling the formation of fine patterns efficiently and simplifies the fabrication process by eliminating the need for additional layers, thus enhancing the precision and efficiency of semiconductor device manufacturing.
Implementation Method 1
converting at least a part of the first photoresist pattern into a second photoresist pattern including tin fluoride, through a plasma treatment process using fluorine element
Implementation Method 2
converting the first photoresist pattern including tin (Sn) into a second photoresist pattern including tin fluoride (SnFx)
Data Source
AI summary
A method for fabricating a semiconductor device includes forming a first mask layer on a substrate, forming an under layer on the first mask layer, forming a first photoresist pattern that includes tin on the under layer, converting at least a part of the first photoresist pattern into a second photoresist pattern including tin fluoride, through a plasma treatment process using fluorine element, etching the under layer using the second photoresist pattern as a first mask to form an under pattern, etching the first mask layer to form a first mask pattern, and etching at least a part of the substrate, using a mask pattern including the first mask pattern as a second mask.