Tin-Containing Etch Mask Surface Modification for Uniform Patterning
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Solution Overview
Problem
Current substrate processing methods face challenges in effectively modifying tin-containing films to enhance their etching resistance and uniformity, particularly in semiconductor device manufacturing, where precise pattern formation and etching are critical.
Innovation Solution
A substrate processing method involving the use of a halogen-containing or oxygen-containing gas to form a modified film on a tin-containing film, which includes forming a plasma or reacting the gas with the film surface to create a tin-halogen or tin-oxygen bond, thereby improving the film's thermal stability and chemical resistance, and optionally depositing an additional film using techniques like plasma CVD or ALD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a tin-containing film is used as an etching mask, then pattern formation is enabled, but the film exhibits insufficient etching resistance and uniformity
Solution Approach 1:
The patent applies preliminary action by forming a modified film on the tin-containing film before the etching process. This modification step pre-treats the mask film to enhance its etching resistance and uniformity, ensuring better performance during subsequent etching operations. The modification involves supplying processing gas to form a modified film on the surface of the tin-containing film, which prepares the mask in advance for the etching process.
2Reliability
If the tin-containing film is modified by supplying processing gas, then etching resistance is improved, but process complexity increases
Solution Approach 1:
The patent merges the modification process with the existing etching process flow by integrating the processing gas supply step into the overall substrate processing sequence. The modification is performed in-situ within the same chamber used for etching, combining multiple functions into a unified process system. This approach reduces the need for separate processing equipment and minimizes the overall process complexity while achieving improved etching resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the etching resistance and uniformity of the tin-containing film, reducing line edge roughness and line width roughness, and allows for more precise etching of the underlying target film with improved chemical resistance and thermal stability.
Implementation Method 1
forming a plasma from the processing gas; and forming the modified film on the tin-containing film by the plasma
Implementation Method 2
reacting the processing gas and a surface of the tin-containing film to form the modified film
Implementation Method 3
the processing gas including a halogen-containing gas or an oxygen-containing gas
Data Source
AI summary
A substrate processing method according to the present disclosure includes: providing a substrate in a chamber, the substrate having an etching target film and a tin-containing film, the tin-containing film defining at least one opening on the etching target film; and forming a modified film by supplying a processing gas to the chamber to form the modified film on a surface of the tin-containing film, the processing gas including a halogen-containing gas or an oxygen-containing gas.